NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The TPV595 is Designed for Class AB Push Pull, Common Emitter from 470 to 860 MHz Applications. FEATURES: • Gold Metalization • Emitter Ballast Resistors • Internal Input Matching

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe TPV595 is Designed for Class AB Push Pull, Common Emitter from 470 to 860 MHz Applications.FEATURES:\n• Gold Metalization\n• Emitter Ballast Resistors\n• Internal Input Matching

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:\nThe TPV595A is Designed for Class AB Push Pull, Common Emitter from 470 to 860 MHz Applications.FEATURES:\n• Gold Metalization\n• Emitter Ballast Resistors\n• Internal Input Matching

UHF Linear Power Transistor

The RF Line UHF Linear Power Transistor designed for driver and output stages in band IV and V TV transposes and transmitter amplifiers. The TPV595A uses gold metallized die with diffused emitter ballast resistors to enhance reliability, ruggedness and linearity. • Band IVand V (470-

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The TPV595A is Designed for Class AB Push Pull, Common Emitter from 470 to 860 MHz Applications. FEATURES: • Gold Metalization • Emitter Ballast Resistors • Internal Input Matching

TRANS GP BJT NPN 27V 4CASE244-04

Silicon Diode, Dual, Common Cathode, High Speed

Description: The NTE595 consists of two silicon diodes in an SOT–23 type surface mount package. The cathodes are common and the device is intended for high–speed switching applications in thick and thin–film circuits.

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    

RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS

DESCRIPTION The SD1732 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in UHF and Band IV, V television transmitters and transposes. FEATURES SUMMARY ■ 470 - 860 MHz ■ 25 VOLTS ■ CLASS A PUSH PULL ■ DE