NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI TPV591 is a Common Emitter Device Designed for High Linearity Class A Television Band IV and V Transmitters. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: TPV591 is aCommon Emitter Device Designed for High Linearity Class A Television Band IV and VTransmitters, FEATURES INCLUDE: • GoldMetalization • Emitter Ballasting

NPN SILICON RF POWER TRANSISTOR

TRANS GP BJT NPN 27V 4CASE244-04

NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a TO-202; SOT128B plastic package. FEATURES • Low current (max. 150 mA) • High voltage (max. 210 V). APPLICATIONS • Telephone systems.

NPN 7 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS Intended for applications in the GHz range

Addressable peripheral drivers

DESCRIPTION The NE590/591 addressable peripheral drivers are high current latched drivers, similar in function to the 9334 address decoder. The device has eight Darlington power outputs, each capable of 250mA load current. The outputs are turned on or off by respectively loading a logic high

Addressable peripheral drivers

DESCRIPTION The NE590/591 addressable peripheral drivers are high current latched drivers, similar in function to the 9334 address decoder. The device has eight Darlington power outputs, each capable of 250mA load current. The outputs are turned on or off by respectively loading a logic high

PNP BISS transistor

DESCRIPTION PNP BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. NPN complement: PMMT491A. FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and lo