TOSHIBA PHOTO IC SILICON EXITAXIAL PLANAR

PHOTOELECTRIC SWITCHES COPIERS, PRINTERS, AND FACSIMILES COMMODITY AND TICKET VENDING MACHINES AND TERMINAL EQUIPMENT IN FINANCIAL COMPUTER SYSTEMS HANDY TERMINALS

TOSHIBA PHOTO IC SILICON EXITAXIAL PLANAR

集成电源解决方案，采用 MicroSiP™ 封装的 3W 高效升压转换器模块

TPS81256 器件是一个完整的 MicroSiP 直流/直流升压电源解决方案，适用于电池供电的便携式 应用。封装中包括开关稳压器、电感器和输入/输出电容器。只需一个极小的额外输出电容器即可完成此设计。\n\nTPS81256 是一款基于高频同步升压直流/直流转换器而构建的器件，经优化可适用于电池供电的便携式 应用。 \n\n该直流/直流转换器可在 4MHz 的稳定开关频率下工作，可在轻负载电流时进入省电模式，以保持整个负载电流范围内的高效率。 \n\nPFM 模式可在轻负载工作时将电源电流降至 43µA（典型值），从而延长电池使用寿命。TPS81256 适用于低功耗 应用，在整个锂离子电池 • 运行频率为 4MHz 时，效率 91%\n• 2.5V 至 5.5V 的宽输入电压范围\n• VOUT=5.0V，VIN≥3.3V 时，IOUT≥550mA\n• 5.0V 固定输出电压\n• 总直流电压精度为 ±2%\n• 43µA 电源电流\n• 同类产品中最佳的线路和负载瞬态\n• VIN≥ VOUT 运行\n• 低纹波轻负载脉冲频率调制 (PFM) 模式\n• 关断期间的真正负载断开\n• 热关断和过载保护\n• 高度低于 1mm 的解决方案\n• 总体解决方案尺寸 2\n• 9 引脚 MicroSiP 封装;

3-W, HIGH EFFICIENCY STEP-UP CONVERTER IN MicroSiP??PACKAGING

文件：4.5868 Mbytes Page：27 Pages

3-W, HIGH EFFICIENCY STEP-UP CONVERTER IN MicroSiP??PACKAGING

文件：4.33388 Mbytes Page：23 Pages

3-W, HIGH EFFICIENCY STEP-UP CONVERTER IN MicroSiP??PACKAGING

文件：4.5868 Mbytes Page：27 Pages

TPS81256 3-W, High Efficiency Step-Up Converter In MicroSiP??Packaging

文件：4.56981 Mbytes Page：26 Pages

High Efficiency Step-Up Converter In MicroSiP Packaging

文件：4.63993 Mbytes Page：27 Pages

TPS8125xEVM

文件：473.44 Kbytes Page：14 Pages

3-W, HIGH EFFICIENCY STEP-UP CONVERTER IN MicroSiP??PACKAGING

文件：4.33388 Mbytes Page：23 Pages

High Efficiency Step-Up Converter In MicroSiP Packaging

文件：4.63993 Mbytes Page：27 Pages

3-W, HIGH EFFICIENCY STEP-UP CONVERTER IN MicroSiP??PACKAGING

文件：4.5868 Mbytes Page：27 Pages

3-W, HIGH EFFICIENCY STEP-UP CONVERTER IN MicroSiP??PACKAGING

文件：4.33388 Mbytes Page：23 Pages

封装/外壳：9-SMD 模块 功能：升压 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG BOOST 5V 9USIP 集成电路（IC） 稳压器 - DC-DC 开关稳压器

封装/外壳：9-SMD 模块 功能：升压 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG BOOST 5V 9USIP 集成电路（IC） DC DC 开关稳压器

3-W, HIGH EFFICIENCY STEP-UP CONVERTER IN MicroSiP??PACKAGING

文件：4.33388 Mbytes Page：23 Pages

High Efficiency Step-Up Converter In MicroSiP Packaging

文件：4.63993 Mbytes Page：27 Pages

3-W, HIGH EFFICIENCY STEP-UP CONVERTER IN MicroSiP??PACKAGING

文件：4.5868 Mbytes Page：27 Pages

3-W, HIGH EFFICIENCY STEP-UP CONVERTER IN MicroSiP??PACKAGING

文件：4.33388 Mbytes Page：23 Pages

Integrated Circuit Audio Power Amplifier, 1W

Description: The NTE812 is a monolithic integrated circuit in a 14–Lead DIP type package designed for use in driver and power amplifier applications at frequencies from 50Hz to 40kHz. This device will deliver up to 1W RMS output power into an 8Ω load. The high input impedance and low standby curr

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M