TOSHIBA PHOTO IC SILICON EXITAXIAL PLANAR

PHOTOELECTRIC SWITCHES COPIERS, PRINTERS, AND FACSIMILES COMMODITY AND TICKET VENDING MACHINES AND TERMINAL EQUIPMENT IN FINANCIAL COMPUTER SYSTEMS HANDY TERMINALS

TOSHIBA PHOTO IC SILICON EXITAXIAL PLANAR

集成电源解决方案，采用 MicroSiP™ 封装的 3W 高效升压转换器模块

3-W, HIGH EFFICIENCY STEP-UP CONVERTER IN MicroSiP??PACKAGING

文件：4.33388 Mbytes Page：23 Pages

3-W, HIGH EFFICIENCY STEP-UP CONVERTER IN MicroSiP??PACKAGING

文件：4.5868 Mbytes Page：27 Pages

3-W, HIGH EFFICIENCY STEP-UP CONVERTER IN MicroSiP??PACKAGING

文件：4.5868 Mbytes Page：27 Pages

TPS81256 3-W, High Efficiency Step-Up Converter In MicroSiP??Packaging

文件：4.56981 Mbytes Page：26 Pages

High Efficiency Step-Up Converter In MicroSiP Packaging

文件：4.63993 Mbytes Page：27 Pages

3-W, HIGH EFFICIENCY STEP-UP CONVERTER IN MicroSiP??PACKAGING

文件：4.33388 Mbytes Page：23 Pages

TPS8125xEVM

文件：473.44 Kbytes Page：14 Pages

High Efficiency Step-Up Converter In MicroSiP Packaging

文件：4.63993 Mbytes Page：27 Pages

3-W, HIGH EFFICIENCY STEP-UP CONVERTER IN MicroSiP??PACKAGING

文件：4.5868 Mbytes Page：27 Pages

3-W, HIGH EFFICIENCY STEP-UP CONVERTER IN MicroSiP??PACKAGING

文件：4.33388 Mbytes Page：23 Pages

封装/外壳：9-SMD 模块 功能：升压 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG BOOST 5V 9USIP 集成电路（IC） 稳压器 - DC-DC 开关稳压器

封装/外壳：9-SMD 模块 功能：升压 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG BOOST 5V 9USIP 集成电路（IC） DC DC 开关稳压器

High Efficiency Step-Up Converter In MicroSiP Packaging

文件：4.63993 Mbytes Page：27 Pages

3-W, HIGH EFFICIENCY STEP-UP CONVERTER IN MicroSiP??PACKAGING

文件：4.33388 Mbytes Page：23 Pages

3-W, HIGH EFFICIENCY STEP-UP CONVERTER IN MicroSiP??PACKAGING

文件：4.5868 Mbytes Page：27 Pages

3-W, HIGH EFFICIENCY STEP-UP CONVERTER IN MicroSiP??PACKAGING

文件：4.33388 Mbytes Page：23 Pages

Integrated Circuit Audio Power Amplifier, 1W

Description: The NTE812 is a monolithic integrated circuit in a 14–Lead DIP type package designed for use in driver and power amplifier applications at frequencies from 50Hz to 40kHz. This device will deliver up to 1W RMS output power into an 8Ω load. The high input impedance and low standby curr

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M