位置：首页 > IC中文资料 > TPS7H2201HKR/EM
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TPS7H2201HKR/EM | TPS7H2201-SPRadiationHardened1.5-Vto7-V,6-ALoadSwitch 1Features 1•Radiationperformance: –Radiationhardnessassurance(RHA)upto TID100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)immunetoLET=75MeV-cm2/mg –SEFI/SETcharacterizedto LET=75MeV-cm2/mg •Integratedsingle | TITexas Instruments 德州仪器美国德州仪器公司 |  |   |
TPS7H2201HKR/EM | TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse 1Features •Standardmicrocircuitavailable,SMD 5962R17220 •Vendoritemdrawingavailable,VIDV62/23608 •Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR) | TI1Texas Instruments 德州仪器美国德州仪器公司 |  | |
TPS7H2201HKR/EM | TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse 1Features •Standardmicrocircuitavailable,SMD 5962R17220 •Vendoritemdrawingavailable,VIDV62/23608 •Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i | TI1Texas Instruments 德州仪器美国德州仪器公司 | | |
TPS7H2201HKR/EM | TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse 1Features •Standardmicrocircuitavailable,SMD 5962R17220 •Vendoritemdrawingavailable,VIDV62/23608 •Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i | TI2Texas Instruments 德州仪器美国德州仪器公司 |  | |
TPS7H2201HKR/EM | RadiationHardened1.5-Vto7-V,6-ALoadSwitch 文件：917.07 Kbytes Page：32 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 | | |
TPS7H2201HKR/EM | RadiationHardened1.5-Vto7-V,6-ALoadSwitch 文件：1.08156 Mbytes Page：32 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 | | |
TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse 1Features •Standardmicrocircuitavailable,SMD 5962R17220 •Vendoritemdrawingavailable,VIDV62/23608 •Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i | TI1Texas Instruments 德州仪器美国德州仪器公司 | | | |
TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse 1Features •Standardmicrocircuitavailable,SMD 5962R17220 •Vendoritemdrawingavailable,VIDV62/23608 •Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR) | TI1Texas Instruments 德州仪器美国德州仪器公司 | | | |
RadiationHardened1.5-Vto7-V,6-ALoadSwitch 文件：916.13 Kbytes Page：31 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 | | | |
RadiationHardened1.5-Vto7-V,6-ALoadSwitch 文件：917.07 Kbytes Page：32 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 | | | |
RadiationHardened1.5-Vto7-V,6-ALoadSwitch 文件：916.13 Kbytes Page：31 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
24+ |
NA/ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
TI(德州仪器) |
2024+ |
N/A |
500000 |
诚信服务,绝对原装原盘 |
|||
TI |
18+ |
原厂原装假一赔十 |
26 |
原厂很远现货很近,找现货选星佑电子,原厂原装假一赔 |
|||
TI/德州仪器 |
25+ |
原厂封装 |
9999 |
||||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
TI/德州仪器 |
23+ |
CFP-16 |
2000 |
正规渠道,只有原装! |
|||
TI |
25+ |
CFP (HKR) |
6000 |
原厂原装,价格优势 |
|||
TI |
25+ |
原封装 |
66330 |
郑重承诺只做原装进口现货 |
|||
TI |
16+ |
原厂封装 |
29 |
宇航IC只做原装假一罚十 |
|||
Texas Instruments |
23+/24+ |
32-TSSOP |
8600 |
只供原装进口公司现货+可订货 |
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TPS7H2201HKR/EM规格书下载地址
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DdatasheetPDF页码索引
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