TPS730 Low-Noise, High PSRR, RF, 200-mA Low-Dropout Linear Regulators

1 Features 1• 200-mA RF Low-Dropout Regulator With Enable • Available in Fixed Voltages from 1.8 V to 3.3 V and Adjustable Voltages (1.22 V to 5.5 V) • High PSRR (68 dB at 100 Hz) • Low Noise (33 μVRMS, TPS73018) • Fast Start-Up Time (50 μs) • Stable With a 2.2-μF Ceramic Capacitor • Exce

TPS730 Low-Noise, High PSRR, RF, 200mA, Low-Dropout Linear Regulator

1 Features • 200mA low-dropout regulator with enable • Available in fixed voltages from 1.8V to 3.3V and adjustable voltages (1.22V to 5.5V) • High PSRR (68dB at 100Hz) • Low noise: – 55μVRMS (legacy chip) – 69μVRMS (new chip) • Stable with a 2.2μF ceramic capacitor • Excellent load, line

Low-Noise, High PSRR, RF, 200-mA Low-Dropout Linear Regulators

文件：1.1151 Mbytes Page：31 Pages

LOW-NOISE, HIGH PSRR, RF 200-mA LOW-DROPOUT LINEAR REGULATORS

文件：271.73 Kbytes Page：13 Pages

LOW-NOISE, HIGH PSRR, RF 200-mA LOW-DROPOUT LINEAR REGULATORS

文件：385.83 Kbytes Page：15 Pages

LOW-NOISE, HIGH PSRR, RF 200-mA LOW-DROPOUT LINEAR REGULATORS

文件：318.71 Kbytes Page：16 Pages

封装/外壳：SC-74A，SOT-753 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG LINEAR 3.3V 200MA SOT23-5 集成电路（IC） 线性 + 开关稳压器

封装/外壳：SC-74A，SOT-753 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG LINEAR 3.3V 200MA SOT23-5 集成电路（IC） 稳压器 - 线性

TPS730 Low-Noise, High PSRR, RF, 200-mA Low-Dropout Linear Regulators

1 Features 1• 200-mA RF Low-Dropout Regulator With Enable • Available in Fixed Voltages from 1.8 V to 3.3 V and Adjustable Voltages (1.22 V to 5.5 V) • High PSRR (68 dB at 100 Hz) • Low Noise (33 μVRMS, TPS73018) • Fast Start-Up Time (50 μs) • Stable With a 2.2-μF Ceramic Capacitor • Exce

TPS730 Low-Noise, High PSRR, RF, 200mA, Low-Dropout Linear Regulator

1 Features • 200mA low-dropout regulator with enable • Available in fixed voltages from 1.8V to 3.3V and adjustable voltages (1.22V to 5.5V) • High PSRR (68dB at 100Hz) • Low noise: – 55μVRMS (legacy chip) – 69μVRMS (new chip) • Stable with a 2.2μF ceramic capacitor • Excellent load, line

TPS730 Low-Noise, High PSRR, RF, 200mA, Low-Dropout Linear Regulator

1 Features • 200mA low-dropout regulator with enable • Available in fixed voltages from 1.8V to 3.3V and adjustable voltages (1.22V to 5.5V) • High PSRR (68dB at 100Hz) • Low noise: – 55μVRMS (legacy chip) – 69μVRMS (new chip) • Stable with a 2.2μF ceramic capacitor • Excellent load, line

TPS730 Low-Noise, High PSRR, RF, 200-mA Low-Dropout Linear Regulators

1 Features 1• 200-mA RF Low-Dropout Regulator With Enable • Available in Fixed Voltages from 1.8 V to 3.3 V and Adjustable Voltages (1.22 V to 5.5 V) • High PSRR (68 dB at 100 Hz) • Low Noise (33 μVRMS, TPS73018) • Fast Start-Up Time (50 μs) • Stable With a 2.2-μF Ceramic Capacitor • Exce

Low-Noise, High PSRR, RF, 200-mA Low-Dropout Linear Regulators

文件：1.1151 Mbytes Page：31 Pages

LOW-NOISE, HIGH PSRR, RF 200-mA LOW-DROPOUT LINEAR REGULATORS

文件：318.71 Kbytes Page：16 Pages

LOW-NOISE, HIGH PSRR, RF 200-mA LOW-DROPOUT LINEAR REGULATORS

文件：385.83 Kbytes Page：15 Pages

LOW-NOISE, HIGH PSRR, RF 200-mA LOW-DROPOUT LINEAR REGULATORS

文件：271.73 Kbytes Page：13 Pages

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

MMCX PLUG R/A SEMI-RIGID, RG405

文件：137.04 Kbytes Page：2 Pages