型号 功能描述 生产厂家 企业 LOGO 操作
TPS73033DBVT.A

TPS730 Low-Noise, High PSRR, RF, 200-mA Low-Dropout Linear Regulators

1 Features 1• 200-mA RF Low-Dropout Regulator With Enable • Available in Fixed Voltages from 1.8 V to 3.3 V and Adjustable Voltages (1.22 V to 5.5 V) • High PSRR (68 dB at 100 Hz) • Low Noise (33 μVRMS, TPS73018) • Fast Start-Up Time (50 μs) • Stable With a 2.2-μF Ceramic Capacitor • Exce

TI

德州仪器

TPS73033DBVT.A

TPS730 Low-Noise, High PSRR, RF, 200mA, Low-Dropout Linear Regulator

1 Features • 200mA low-dropout regulator with enable • Available in fixed voltages from 1.8V to 3.3V and adjustable voltages (1.22V to 5.5V) • High PSRR (68dB at 100Hz) • Low noise: – 55μVRMS (legacy chip) – 69μVRMS (new chip) • Stable with a 2.2μF ceramic capacitor • Excellent load, line

TI

德州仪器

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

RENESAS

瑞萨

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

RENESAS

瑞萨

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

RENESAS

瑞萨

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

RENESAS

瑞萨

MMCX PLUG R/A SEMI-RIGID, RG405

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POMONA

Pomona Electronics

更新时间:2026-1-28 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
25+
SOT-23-5
20948
样件支持,可原厂排单订货!
TI
25+
SOT-23-5
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
TI
24+
SOT23-5
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
TI(德州仪器)
23+
标准封装
6000
正规渠道,只有原装!
TI/德洲
2021+
60000
原装现货,欢迎询价
TI德州
22+
SOT23-5
8200
原装现货库存.价格优势
TI/德州仪器
24+
NA
24850
全新原装正品现货 量大可订
TI/TEXAS
26+
原厂封装
8931
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
Texas Instruments
25+
SC-74A SOT-753
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
TI
2021
BGA
1000
全新、原装

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