型号 功能描述 生产厂家 企业 LOGO 操作
TPS73033DBVR.A

TPS730 Low-Noise, High PSRR, RF, 200-mA Low-Dropout Linear Regulators

1 Features 1• 200-mA RF Low-Dropout Regulator With Enable • Available in Fixed Voltages from 1.8 V to 3.3 V and Adjustable Voltages (1.22 V to 5.5 V) • High PSRR (68 dB at 100 Hz) • Low Noise (33 μVRMS, TPS73018) • Fast Start-Up Time (50 μs) • Stable With a 2.2-μF Ceramic Capacitor • Exce

TI

德州仪器

TPS73033DBVR.A

TPS730 Low-Noise, High PSRR, RF, 200mA, Low-Dropout Linear Regulator

1 Features • 200mA low-dropout regulator with enable • Available in fixed voltages from 1.8V to 3.3V and adjustable voltages (1.22V to 5.5V) • High PSRR (68dB at 100Hz) • Low noise: – 55μVRMS (legacy chip) – 69μVRMS (new chip) • Stable with a 2.2μF ceramic capacitor • Excellent load, line

TI

德州仪器

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

RENESAS

瑞萨

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

RENESAS

瑞萨

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

RENESAS

瑞萨

Radiation Hardened Driver-GaN Power Stage with 100V GaN FET

Features ▪ Production testing and qualification follow the standard AS6294/1 ▪ 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver ▪ Wide driver bias range of 4.5V to 13.2V ▪ Up to 16.5V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs ▪ Integrated driver optim

RENESAS

瑞萨

MMCX PLUG R/A SEMI-RIGID, RG405

文件:137.04 Kbytes Page:2 Pages

POMONA

Pomona Electronics

更新时间:2026-1-28 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
25+
SOT-23-5
11580
正规渠道,免费送样。支持账期,BOM一站式配齐
TI/德州仪器
25+
30000
房间原装现货特价热卖,有单详谈
TI/德州仪器
24+
SOT23-5
42000
只做全新原装进口现货
TI/德洲
2021+
60000
原装现货,欢迎询价
TI/德州仪器
24+
SOT23
15000
全新原装现货假一赔十
TI/TEXAS
26+
原厂封装
8931
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
Texas Instruments
25+
SC-74A SOT-753
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
TI
24+
5SOT23
2545
TI
17+
SOT23-5
6200
100%原装正品现货
TI
25+
SOT-23-5
11528
样件支持,可原厂排单订货!

TPS73033DBVR.A芯片相关品牌

TPS73033DBVR.A数据表相关新闻