DUAL HOT-SWAP POWER CONTROLLERS WITH INTERDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING

1FEATURES • Dual-Channel High-Side MOSFET Drivers • IN1: 3 V to 13 V; IN2: 3 V to 5.5 V • Output dV/dt Control Limits Inrush Current • Circuit-Breaker With Programmable Overcurrent Threshold and Transient Timer • Power-Good Reporting With Transient Filter • CMOS- and TTL-Compatible Enable I

DUAL HOT SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER

1FEATURES • Dual-Channel High-Side MOSFET Drivers • IN1: 3 V to 13 V; IN2: 3 V to 5.5 V • Output dV/dt Control Limits Inrush Current • Independent Circuit-Breaker With Programmable Overcurrent Threshold and Transient Timer • CMOS- and TTL-Compatible Enable Input • Low, 5-μA Standby Supply

SINGLE HOT-SWAP POWER CONTROLLERS WITH CIRCUIT BREAKER AND POWER-GOOD REPORTING

1FEATURES • Single-Channel High-Side MOSFET Driver • Input Voltage: 3 V to 13 V • Output dV/dt Control Limits Inrush Current • Circuit-Breaker With Programmable Overcurrent Threshold and Transient Timer • Power-Good Reporting With Transient Filter • CMOS- and TTL-Compatible Enable Input •

DUAL HOT-SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING

1FEATURES • Dual-Channel High-Side MOSFET Drivers • IN1: 3 V to 13 V; IN2: 3 V to 5.5 V • Output dV/dt Control Limits Inrush Current • Circuit-Breaker With Programmable Overcurrent Threshold and Transient Timer • Power-Good Reporting With Transient Filter • CMOS- and TTL-Compatible Enable I

封装/外壳：20-TSSOP（0.173"，4.40mm 宽） 包装：管件 描述：IC HOT SWAP CTRLR GP 20TSSOP 集成电路（IC） 热插拔控制器

DUAL HOT SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER

文件：503.85 Kbytes Page：26 Pages

DUAL HOT-SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING

文件：456.02 Kbytes Page：25 Pages

DUAL HOT SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER

文件：503.85 Kbytes Page：26 Pages

DUAL HOT-SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING

1FEATURES • Dual-Channel High-Side MOSFET Drivers • IN1: 3 V to 13 V; IN2: 3 V to 5.5 V • Output dV/dt Control Limits Inrush Current • Circuit-Breaker With Programmable Overcurrent Threshold and Transient Timer • Power-Good Reporting With Transient Filter • CMOS- and TTL-Compatible Enable I

DUAL HOT-SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING

1FEATURES • Dual-Channel High-Side MOSFET Drivers • IN1: 3 V to 13 V; IN2: 3 V to 5.5 V • Output dV/dt Control Limits Inrush Current • Circuit-Breaker With Programmable Overcurrent Threshold and Transient Timer • Power-Good Reporting With Transient Filter • CMOS- and TTL-Compatible Enable I

DUAL HOT-SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING

1FEATURES • Dual-Channel High-Side MOSFET Drivers • IN1: 3 V to 13 V; IN2: 3 V to 5.5 V • Output dV/dt Control Limits Inrush Current • Circuit-Breaker With Programmable Overcurrent Threshold and Transient Timer • Power-Good Reporting With Transient Filter • CMOS- and TTL-Compatible Enable I

DUAL HOT-SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING

文件：456.02 Kbytes Page：25 Pages

DUAL HOT-SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING

文件：456.02 Kbytes Page：25 Pages

DUAL HOT-SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING

文件：456.02 Kbytes Page：25 Pages

封装/外壳：20-TSSOP（0.173"，4.40mm 宽） 包装：管件 描述：IC HOT SWAP CTRLR GP 20TSSOP 集成电路（IC） 热插拔控制器

Vibrating level switch

The device Type 8110 is a filling level switch for liquids, using a tuning fork as the sensor element. It is designed for industrial use in all areas of process technology and can be used in liquids. Typical applications are overflow or run-dry protection. The small tuning fork (40 mm in lengt

1.5 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed

SOT-23 Plastic-Encapsulate MOSFETS

文件：5.03147 Mbytes Page：5 Pages

-2.8A竊?20V P-CHANNEL MOSFET

文件：111.41 Kbytes Page：4 Pages

10V P-Channel Enhanced MOS FET

文件：171.02 Kbytes Page：3 Pages