丝印代码：2066；Current-Limited, Power-Distribution Switches

1 Features • 70mΩ high-side MOSFET • 1A continuous current • Thermal and short-circuit protection • Accurate current limit (1.1A min, 1.9A max) • Operating range: 2.7V to 5.5V • 0.6ms typical rise time • Undervoltage lockout • Deglitched fault report ( OC) • No OC Glitch during power up

CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES

文件：1.28314 Mbytes Page：35 Pages

CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES

文件：1.30885 Mbytes Page：38 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR SWITCH N-CHAN 1:2 8SOIC 集成电路（IC） 配电开关，负载驱动器

丝印代码：2066；Current-Limited, Power-Distribution Switches

1 Features • 70mΩ high-side MOSFET • 1A continuous current • Thermal and short-circuit protection • Accurate current limit (1.1A min, 1.9A max) • Operating range: 2.7V to 5.5V • 0.6ms typical rise time • Undervoltage lockout • Deglitched fault report ( OC) • No OC Glitch during power up

丝印代码：2066；Current-Limited, Power-Distribution Switches

1 Features • 70mΩ high-side MOSFET • 1A continuous current • Thermal and short-circuit protection • Accurate current limit (1.1A min, 1.9A max) • Operating range: 2.7V to 5.5V • 0.6ms typical rise time • Undervoltage lockout • Deglitched fault report ( OC) • No OC Glitch during power up

CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES

文件：1.30885 Mbytes Page：38 Pages

CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES

文件：1.28314 Mbytes Page：35 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC PWR SWITCH N-CHAN 1:2 8SOIC 集成电路（IC） 配电开关，负载驱动器

10-16GHz Low Noise Amplifier

Description The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Main Features • Broad band performance 10-16GHz • 2.

10-16GHz Self biased Low Noise Amplifier

Description The monolithic microwave IC (MMIC) in the package is a two-stage self biased wide band monolithic low noise amplifier. The MMIC is manufactured with a standard PM-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

RF AMPLIFIER FOR DIGITAL SERVO CD STSTEM

RF AMPLIFIER FOR DIGITAL SERVO CD STSTEM TA2066F is a 3-beam type PUH compatible RF Amplifier to be used in the CD system. In combination with a CMOS single chip processor TC9295F / TC9296F / TC9405F / TC9406F, a CD system can be composed very simply.

RF AMPLIFIER FOR DIGITAL SERVO CD STSTEM

RF AMPLIFIER FOR DIGITAL SERVO CD STSTEM TA2066F is a 3-beam type PUH compatible RF Amplifier to be used in the CD system. In combination with a CMOS single chip processor TC9295F / TC9296F / TC9405F / TC9406F, a CD system can be composed very simply.

50V - 1.5A QUAD DARLINGTON SWITCHES

文件：98.7 Kbytes Page：8 Pages