CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES

FEATURES · 70-mΩ High-Side MOSFET · 250-mA Continuous Current · Thermal and Short-Circuit Protection · Accurate Current Limit (0.3 A min, 0.7 A max) · Operating Range: 2.7 V to 5.5 V · 0.6-ms Typical Rise Time · Undervoltage Lockout · Deglitched Fault Report (OC) · No OC Glitch During Pow

2-ch, 0.25A loading, 2.7-5.5V, 70mΩ USB power switch, active-low

The TPS204xB/TPS2055B power-distribution switches are intended for applications where heavy capacitive loads and short circuits are likely to be encountered. These devices incorporate 70-m N-channel MOSFET power switches for power-distribution systems that require multiple power switches in a single • 70-m High-Side MOSFET\n• Thermal and Short-Circuit Protection\n• Operating Range: 2.7 V to 5.5 V\n• Undervoltage Lockout \n• No OC Glitch During Power Up\n• Bidirectional Switch\n• ESD Protection\n• APPLICATIONS \n• Short-Circuit Protections;

CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES

文件：881.18 Kbytes Page：30 Pages

CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES

文件：881.51 Kbytes Page：29 Pages

丝印代码：2046B；CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES

FEATURES · 70-mΩ High-Side MOSFET · 250-mA Continuous Current · Thermal and Short-Circuit Protection · Accurate Current Limit (0.3 A min, 0.7 A max) · Operating Range: 2.7 V to 5.5 V · 0.6-ms Typical Rise Time · Undervoltage Lockout · Deglitched Fault Report (OC) · No OC Glitch During Pow

丝印代码：2046B；CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES

FEATURES · 70-mΩ High-Side MOSFET · 250-mA Continuous Current · Thermal and Short-Circuit Protection · Accurate Current Limit (0.3 A min, 0.7 A max) · Operating Range: 2.7 V to 5.5 V · 0.6-ms Typical Rise Time · Undervoltage Lockout · Deglitched Fault Report (OC) · No OC Glitch During Pow

丝印代码：2046B；CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES

FEATURES · 70-mΩ High-Side MOSFET · 250-mA Continuous Current · Thermal and Short-Circuit Protection · Accurate Current Limit (0.3 A min, 0.7 A max) · Operating Range: 2.7 V to 5.5 V · 0.6-ms Typical Rise Time · Undervoltage Lockout · Deglitched Fault Report (OC) · No OC Glitch During Pow

丝印代码：2046B；CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES

FEATURES · 70-mΩ High-Side MOSFET · 250-mA Continuous Current · Thermal and Short-Circuit Protection · Accurate Current Limit (0.3 A min, 0.7 A max) · Operating Range: 2.7 V to 5.5 V · 0.6-ms Typical Rise Time · Undervoltage Lockout · Deglitched Fault Report (OC) · No OC Glitch During Pow

CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES

文件：881.51 Kbytes Page：29 Pages

CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES

文件：881.51 Kbytes Page：29 Pages

CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES

文件：881.51 Kbytes Page：29 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC PWR SWITCH N-CHAN 1:2 8SOIC 集成电路（IC） 配电开关，负载驱动器

CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES

文件：881.51 Kbytes Page：29 Pages

功能：配电开关（负载开关） 包装：盒 描述：TPS2046BEVM-293 开发板，套件，编程器 评估和演示板及套件

DUAL CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

文件：410.8 Kbytes Page：23 Pages

UHF power transistor

DESCRIPTION NPN silicon planar transistor in a 2-lead SOT460A flange package with a ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output match

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

4-PORT HUB FOR THE UNIVERSAL SERIAL BUS WITH OPTIONAL SERIAL EEPROM INTERFACE

文件：323.94 Kbytes Page：21 Pages

4-PORT HUB FOR THE UNIVERSAL SERIAL BUS WITH OPTIONAL SERIAL EEPROM INTERFACE

文件：230.97 Kbytes Page：16 Pages