H-BRIDGE GATE-PROTECTED POWER DMOS ARRAY

文件：212.59 Kbytes Page：12 Pages

H-BRIDGE GATE-PROTECTED POWER DMOS ARRAY

文件：566.28 Kbytes Page：17 Pages

H-BRIDGE GATE-PROTECTED POWER DMOS ARRAY

H-BRIDGE GATE-PROTECTED POWER DMOS ARRAY

文件：566.28 Kbytes Page：17 Pages

H-BRIDGE GATE-PROTECTED POWER DMOS ARRAY

文件：566.28 Kbytes Page：17 Pages

H-BRIDGE GATE-PROTECTED POWER DMOS ARRAY

文件：566.28 Kbytes Page：17 Pages

丝印代码：-2L；PNP high-voltage transistor

DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: PMBT5550. FEATURES • Low current (max. 300 mA) • High voltage (max. 150 V). APPLICATIONS • Switching and amplification in high voltage applications such as telephony.

PNP high-voltage transistor

DESCRIPTION PNP high-voltage transistor in a SOT323 plastic package. NPN complements: PMST5550 and PMST5551. FEATURES • Low current (max. 300 mA) • High voltage (max. 150 V). APPLICATIONS • General purpose • Telephony.

丝印代码：P33；SMALL SIGNAL PNP TRANSISTORS

■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ GENERAL PURPOSE AND HIGH VOLTAGE AMPLIFIER

MEDIUM POWER AMPLIFIER

MEDIUM POWER AMPLIFIER ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE

High Efficiency LED in 5 mm Tinted Diffused Package

文件：129.169 Kbytes Page：9 Pages