TOSHIBA Intelligent Power Device Silicon Power MOS Integrated Circuit

1 channel High-Side N channel Power MOSFET Gate Driver 1. Description TPD7107F is a 1channel high-side N channel power MOSFET gate driver. This IC contains a charge pump circuit, allowing easy configuration of a high-side switch for large-current applications. 2. Uses ● Junction Boxes for Auto

Intelligent power device (High side power-MOSFET driver with built-in charge pump)

封装/外壳：10-WFDFN 裸露焊盘 包装：管件 描述：IPD MOSFET IC WSON10 PD=1.84W VD 集成电路（IC） 栅极驱动器

Common Mode EMI Inductors

[J.W.Miller] Special Features •Reduce conductive EMI emission •High current capacity •High impedance at low frequency •Dielectric strength 3750VRMS •Coil wound on VW-1 rated plastic cased ferrite core •Operating temperature -55 to +105°C

Common Mode EMI Chokes

Special Features • Dual winding • Low radiation • High current capacity • High inductance • Dielectric strength 1000Vrms • Mounted on VW-1 rated header • Fixed pins for easy PCB insertion • Operating temperature -55 to +105°C

Common Mode EMI Chokes

Special Features • Reduce conductive EMI emission • High current capacity • High impedance at low frequency • Dielectric strength 3750 Vrms • Coil wound on UL 94V-0 rated plastic cased ferrite core • Operating temperature -55 to +105 °C

Common Mode EMI Chokes

Special Features • Reduce conductive EMI emission • High current capacity • High impedance at low frequency • Dielectric strength 3750 Vrms • Coil wound on UL 94V-0 rated plastic cased ferrite core • Operating temperature -55 to +105 °C

Miniature Rocker Lever Handle Switches

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