TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit

1 channel High-Side N channel Power MOSFET Gate Driver TPD7104AF is a 1channel high-side N channel power MOSFET gate driver. This IC contains a charge pump circuit, allowing easy configuration of a high-side switch for large-current applications. Features  Charge pump circuit is built in  B

Intelligent power device 60V (High side power-MOSFET driver with built-in charge pump)

Common Mode EMI Inductors

[J.W.Miller] Special Features •Reduce conductive EMI emission •High current capacity •High impedance at low frequency •Dielectric strength 3750VRMS •Coil wound on VW-1 rated plastic cased ferrite core •Operating temperature -55 to +105°C

FIBRE CHANNEL Dual Transformer

FIBRE CHANNEL Dual Transformer • Designed for use with 75Ω Coaxial or 150Ω STP Cable • Fast rise time and low baseline wander

Dual Transformer

文件：410.28 Kbytes Page：1 Pages

7000 SERIES/HIGH RELIABILITY REED RELAYS

文件：1.39554 Mbytes Page：4 Pages

Push Button Switches

文件：102.65 Kbytes Page：1 Pages