HIGH SIDE POWER SWITCH FOR MOTORS SOLENOIDS AND LAMP DRIVERS

High-side Power Switch for Motors, Solenoids, and Lamp Drivers The TPD1018F is a monolithic power IC for high-side switches. The IC has a vertical MOS FET output that can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The device is equipped with intelligent self-protect

Intelligent power device 60V (High side switch)

Application Scope：Motor drivers / Solenoid drivers / Lamp drivers\nInput / Output：H/H\nNumber of Circuits：1\nProtection Functions：Shorted load / Overtemperature / Overvoltage\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Average Forward Current IO 0.5 A \nPower Dissipation PD 0.3 W \nJunction temperature Tj 150 ℃ \nOperating Temperature (Max) Topr 125 ℃ \nOperating Temperature (Min) Topr -40 ℃ \nPower Supply Voltage VDD 25 V ;

High-side Power Switch for Motors, Solenoids, and Lamp Drivers

文件：500.4 Kbytes Page：8 Pages

High-side Power Switch for Motors, Solenoids, and Lamp Drivers

文件：500.4 Kbytes Page：8 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible A

Low-voltage dual frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1018M BICMOS device integrates prescalers, programmable dividers, and phase comparators to implement two phase-locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3