Silicon N Channel MOS Type (U-MOSIII)

Lithium Ion Battery Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement mode: Vth = 0.5~1.2 V (VDS =

Lithium Ion Battery Applications

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Silicon N Channel MOS Type (U-MOSIII)

Lithium Ion Battery Applications

文件：190.31 Kbytes Page：7 Pages

Analog Video, RG59, #20 Solid BCCS, 95 BC Braid, PE Jacket

Product Description 20 AWG solid .032 bare copper-covered steel conductor, foam polyethylene insulation, bare copper braid shield (95 coverage), polyethylene jacket.

Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD

Description The ACE8212B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by

INSULATED RING TONGUE TERMINAL

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DC axial fans

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High Voltage Current Shunt Monitor

文件：386.02 Kbytes Page：16 Pages