TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS )

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) High forward transfer admittance: |Yfs| = 13 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enha

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS )

Pseudo inductance for telephones

The BA8201 and BA8201F are ICs with a choke coil action, capable of extracting the DC current from a telephone line while maintaining a high inductance on the telephone line side. This eliminates the need for a choke coil, and facilitates use of the telephone set line in a variety of applications.

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

18W BTL x 2CH AUDIO POWER AMPLIFIER

文件：488.37 Kbytes Page：11 Pages

18W BTL x 2CH AUDIO POWER AMPLIFIER

文件：488.37 Kbytes Page：11 Pages

BTL AUDIO POWER AMPLIFIER

文件：413.12 Kbytes Page：8 Pages