TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)

Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs ● Small footprint due to small and thin package ● Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) ● High forward transfer admittance: |Yfs| = 12 S (typ.) ● Low leakage current: IDSS = −10 µA (max) (VDS = −3

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)

6-Pin DIP Optoisolators for Power Supply Applications(No Base Connection)

6-Pin DIP Optoisolators for Power Supply Applications(No Base Connection) The MOC8101, MOC8102, MOC8103, MOC8104 and MOC8105 devices consist of a gallium arsenide LED optically coupled to a silicon phototransistor in a dual–in–line package. • Closely Matched Current Transfer Ratio (CTR) Minimize

150 MHz SILICON QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATIONS

DESCRIPTION The UPC8101GR is a Silicon Monolithic Integrated Circuit (MMIC) which is manufactured using NECs 20 GHz fT NESAT III process. The Quadrature Modulator was designed for digital mobile communications in general, and the CT2 band requirements in particular. Operating on DC bias voltages

1 GHz DIRECT QUADRATURE MODULATOR FOR DIGITAL MOBILE COMMUNICATION

DESCRIPTION The µPC8110GR is a sillicon monolithic integrated circuit designed as 1 GHz direct quadrature modulator for digital mobile communication systems. This modulator housed in a 20 pin plastic SSOP that easy to install and contributes to miniaturizing the system. The device has power save

400 MHz QUADRATURE MODULATOR FOR DIGITAL MOBILE COMMUNICATION

DESCRIPTION The µPC8105GR is a sillicon monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This modulator housed in a 16 pin plastic SSOP that is easy to install and contributes to miniaturizing the system. The device has power save function

UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The UPC8125GR is a Silicon MMIC manufactured with the NESAT IIITM silicon bipolar process. The IC consists of a 1.8 - 2.0 GHz upconverter with AGC function and a 220 - 270 MHz IQ modulator. The device operates over a wide 2.7 - 5.5 V supply voltage range and features a power save func