丝印代码：8514；Bipolar Transistors Silicon NPN Epitaxial Type

Applications • High-Speed Switching • DC-DC Converters Features (1) High DC current gain: hFE = 120 to 240 (VCE = 2 V, IC = 0.3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.15 V (max) (IC = 1.0 A, IB = 0.1 A) (3) High-speed switching: tf = 170 ns (typ.) (IC = 1.0 A)

Power transistor for high-speed switching applications

Application Scope High-speed switching / DC/DC converters \n

Stand-alone OSD

GENERAL DESCRIPTION The PCA8514 is a member of the PCA85XX CMOS family and is an on-screen character display generator controlled by a microcontroller via the on-chip fast I2C-bus interface or the on-chip High-speed 3-wire serial interface. It is suitable for use in high-end TV or camcorder app

Stand-alone OSD

GENERAL DESCRIPTION The PCA8514 is a member of the PCA85XX CMOS family and is an on-screen character display generator controlled by a microcontroller via the on-chip fast I2C-bus interface or the on-chip High-speed 3-wire serial interface. It is suitable for use in high-end TV or camcorder app

Stand-alone OSD

GENERAL DESCRIPTION The PCA8514 is a member of the PCA85XX CMOS family and is an on-screen character display generator controlled by a microcontroller via the on-chip fast I2C-bus interface or the on-chip High-speed 3-wire serial interface. It is suitable for use in high-end TV or camcorder app

Specification of High Power IR Emitting Diode Chip

DESCRIPTION TS8514VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip (L x W x H

FM IF RECEIVER WITH RSSI

文件：105.27 Kbytes Page：5 Pages