Transistor Silicon NPN Epitaxial Type

High-Speed, High-Voltage Switching Applications DC-DC Converter Applications • High DC current gain: hFE = 120 to 300 (IC = 0.1 A) • Low collector-emitter saturation: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 0.2 μs (typ)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power transistor for high-speed switching applications

Application Scope：High-speed switching\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 1.0 A \nCollector Current ICP 2.0 A \nCollector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 2.25 W \nCollector-Base Voltage VCBO 180 V \nCollector-emitter voltage VCEO 120 V ;

Synchronous Equipment Timing Source for SONET or SDH Network Elements

Description The ACS8510 is a highly integrated, single-chip solution for the Synchronous Equipment Timing Source (SETS) function in a SONET or SDH Network Element. The device generates SONET or SDH Equipment Clocks (SEC) and frame synchronization clocks. The ACS8510 is fully compliant with the re

Micropower uP Watch Dog Timer

General Description The AME8510/8520/8530 family allows the user to customize the CPU monitoring function without any external components. The user has a large choice of reset voltage thresholds and output driver configurations, all of which are preset at the factory. Each wafer is trimmed to

Telephonic Speech Network

Telephonic Speech Network

26 W BTL and 2 x 13 W SE power amplifiers

文件：82.88 Kbytes Page：16 Pages

26 W BTL and 2 x 13 W SE power amplifiers

文件：82.88 Kbytes Page：16 Pages