TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process

High-Speed Switching Applications DC-DC Converter Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 120 ns (typ.)

丝印代码：8505；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power transistor for high-speed switching applications

Application Scope：High-speed switching\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 马来西亚\n Collector Current IC 3 A \nCollector Current ICP 5 A \nCollector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 3.0 W \nCollector-emitter voltage VCEO 50 V \n;

Infrared Remote Control LSI

Infrared Remote Control LSI

Separate Excitation Switching Type with Coil

文件：77.42 Kbytes Page：6 Pages

SUPPLY VOLTAGE SUPERVISOR

文件：213.93 Kbytes Page：6 Pages

SUPPLY VOLTAGE SUPERVISOR

文件：213.93 Kbytes Page：6 Pages

SECAM encoder

文件：466.23 Kbytes Page：32 Pages