MCS51 8-BIT CONTROL-ORIENTED MICROCONTROLLERS

The MCS@51 controllers are optimized for control applications. Byte-processing and numerical operations on small data structures are facilitated by a variety of fast addressing modes for accessing the internal RAM. The instruction set provides a convenient menu of 8-bit arithmetic instructions, in

MCS51 8-BIT CONTROL-ORIENTED MICROCONTROLLERS

The MCS@51 controllers are optimized for control applications. Byte-processing and numerical operations on small data structures are facilitated by a variety of fast addressing modes for accessing the internal RAM. The instruction set provides a convenient menu of 8-bit arithmetic instructions, in

MCS51 8-BIT CONTROL-ORIENTED MICROCONTROLLERS

The MCS@51 controllers are optimized for control applications. Byte-processing and numerical operations on small data structures are facilitated by a variety of fast addressing modes for accessing the internal RAM. The instruction set provides a convenient menu of 8-bit arithmetic instructions, in

SCHOTTKY BARRIER DIODE

Features ● Low VF ● Super high speed switching ● High reliability by planer design Applications ● High speed power switching

丝印代码：DPAK；Schottky Barrier Rectifier

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SCHOTTKY BARRIER DIODE

Schottky barrier diode

Silicon MOS IC

Silicon MOS IC ■Features ●Output MOSFET with high breakdown voltage for voltage step-up, EL driver and CMOS control circuits are integrated into one chip. ●Oscillation circuit is incorporated ●EL voltage controlled push-pull drive system achieves higher EL light intensity. (160Vp-p

SCR?셲

Description Available either in sensitive (TS8) or standard (TN8 / TYN) gate triggering levels, the 8 A SCR series is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

HIGH EFFICIENCY RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes)

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