650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H480G4JSG 650V, 480mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform use

650V 480mΩ SuperGaN® FET in PQFN56

650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H480G4JSG 650V, 480mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform use

650V SuperGaNTM GaN FET in PQFN (source tab)

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