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TP6价格

参考价格：￥0.0000

型号：TP684K35LP 品牌：Stantel 备注：这里有TP6多少钱，2025年最近7天走势，今日出价，今日竞价，TP6批发/采购报价，TP6行情走势销售排行榜，TP6报价。

型号	功能描述	生产厂家&企业
TP6	Max. output 31.5V DC, 12A GeneralFeatures TransformertypeSMPS Inputvoltage100~240VAC Max.output31.5VDC,12A PlugsupportEU,USA,AUS,UK,JPN ColorBlackorgrey CertificateES60601-1,IEC60601-1	TIMOTION TiMOTION Technology Co. Ltd.
TP6	6 x 3.5 mm Tactile Switches 文件：189.17 Kbytes Page：1 Pages	GREATECS Createcs
TP6041	PUSH SWITCHES »Features •SeveralLEDcolorsoptions. »Applications •Operatingswitchesinalltypesofelectronicequipmentsuchasaudio apparatus,officeequipment,communicationsapparatus,TVsets, VCRs,etc.	HIGHLYHighly Electric Co., Ltd 海立电气股份有限公司
TP60P	Silizium-Fotoelement Silicon Photovoltaic Cell Features ●Especiallysuitableforapplicationsfrom400nmto1120nm ●Cathode=backcontact ●Mountingbybolt/nut Applications ●Forcontrolanddrivecircuits ●Lightpulsescanning ●Quantitativelightmeasurementsinthevisiblelightandnearinfraredrange	SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司
TP613	PUSH SWITCHES »Features •PrecisedesignterminaltypeadequateforDIPICpitchsize(multipleof 2.54mm). •Epoxysealingtreatment,freeoffluxentry. •SeveralLEDcolorsoptions. •Operatingswitchesinalltypesofelectronicequipmentsuchasaudio apparatus,officeequipment,communicationsap	HIGHLYHighly Electric Co., Ltd 海立电气股份有限公司
TP614	TACT SWITCHES »Features •Sharpclickfeelingwithpositivereliabilityfeedback. •SeveralLEDcolorsoptions. »Applications •Operatingswitchesinalltypesofelectronicequipmentsuchasaudio apparatus,officeequipment,communicationsapparatus,TVsets, VCRs,etc.	HIGHLYHighly Electric Co., Ltd 海立电气股份有限公司
TP6141	TACT SWITCHES •Sharpclickfeelingwithpositivereliabilityfeedback. •PrecisedesignterminaltypeadequateforDIPICpitchsize(multipleof 2.54mm). •SeveralLEDcolorsoptions. •AdequateforDIP&SMT. »Features •Operatingswitchesinalltypesofelectronicequipmentsuchasaudio apparatu	HIGHLYHighly Electric Co., Ltd 海立电气股份有限公司
TP6149T	TACT SWITCHES »Features •Adequateforcablesoldering. •SeveralLEDcolorsoptions. •Compatibleholderisavailable. »Applications •Operatingswitchesinalltypesofelectronicequipmentsuchas audioapparatus,officeequipment,communications apparatus,TVsets,VCRs,etc.	HIGHLYHighly Electric Co., Ltd 海立电气股份有限公司
TP6151	TACT SWITCHES »Features •Snap-intype,canbemounteddirectlyonP.C.Bboard. •SeveralLEDcolorsoptions. •AdequateforDIP&SMT. •SeveralLEDcolorsorbi-colororRGBcoloroptions. »Applications •Operatingswitchesinalltypesofelectronicequipmentsuchasaudio apparatus,officeequipm	HIGHLYHighly Electric Co., Ltd 海立电气股份有限公司
TP6152	TACT SWITCHES »Features •Snap-intype,canbemounteddirectlyonP.C.Bboard. •SeveralLEDcolorsoptions. •Side-actuatedwithrightangleterminal. •AdequateforSMT. •Operatingswitchesinalltypesofelectronicequipmentsuchas audioapparatus,officeequipment,communications apparatus,TV	HIGHLYHighly Electric Co., Ltd 海立电气股份有限公司
TP617	TACT SWITCHES »Features •Metaldomeandrubberdomeoptions. •PrecisedesignterminaltypeadequateforDIPICpitchsize(multipleof 2.54mm). •AdequateforDIP&SMT. •SeveralLEDcolorsoptions. •Severaltravelingforceoptions. »Applications •Operatingswitchesinalltypesofelectronice	HIGHLYHighly Electric Co., Ltd 海立电气股份有限公司
TP618	TACT SWITCHES »Features •Miniaturestructurewithlongtraveling. •SeveralLEDcolorsoptions. •Customizedcapandsymbolsareavailable. •CombinationofswitchlinkedwithLEDavoidtheLEDfailureduring high-temperatureprocessing. •WaterproofIP67seazled. »Applications •Operatingswitche	HIGHLYHighly Electric Co., Ltd 海立电气股份有限公司
TP61C	Low power consumption and high-precision voltage detection Features «Outputvoltageaccuracy:+2% oStaticworkingcurrent:2uA. «Detectionvoltagerange:1.0-5.0V(100mVstep) oOperatingvoltagerange:0.7V~6.5V «Outputcompatibilityapplication: ‘CMOSorN-channelopendrain	TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司
TP61CC2502S3	Low power consumption and high-precision voltage detection Features «Outputvoltageaccuracy:+2% oStaticworkingcurrent:2uA. «Detectionvoltagerange:1.0-5.0V(100mVstep) oOperatingvoltagerange:0.7V~6.5V «Outputcompatibilityapplication: ‘CMOSorN-channelopendrain	TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司
TP61CC3302S3	Low power consumption and high-precision voltage detection Features «Outputvoltageaccuracy:+2% oStaticworkingcurrent:2uA. «Detectionvoltagerange:1.0-5.0V(100mVstep) oOperatingvoltagerange:0.7V~6.5V «Outputcompatibilityapplication: ‘CMOSorN-channelopendrain	TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司
TP61CC5002S3	Low power consumption and high-precision voltage detection Features «Outputvoltageaccuracy:+2% oStaticworkingcurrent:2uA. «Detectionvoltagerange:1.0-5.0V(100mVstep) oOperatingvoltagerange:0.7V~6.5V «Outputcompatibilityapplication: ‘CMOSorN-channelopendrain	TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司
TP621	TACT SWITCHES »Features •Miniaturestructurewithlongtraveling. •SeveralLEDcolorsoptions. •Customizedcapandsymbolsareavailable. •CombinationofswitchlinkedwithLEDavoidtheLEDfailureduring high-temperatureprocessing. »Applications •Operatingswitchesinalltypesofelectronic	HIGHLYHighly Electric Co., Ltd 海立电气股份有限公司
TP62601	MICROWAVE POWER OSCILLATOR TRANSISTOR ...designedforuseaspoweroscillatorsatfrequenciesto3.0GHzwithtypicaloutputpowerofover1.0watt. •Operationto3.0GHz •HighOutputPower(1.2WTyp@2.5GHz) •Rugged—CapableofWithstandingHighLoadVSWR •HighReliability •HermeticPackage •GoldMetallization •D	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
TP62601	NPN RF POWER TRANSISTOR DESCRIPTION: TheASITP62601isaCommonCollectorDeviceDesignedforApplicationsupto3.0GHzBand. FEATURESINCLUDE: •HermeticPackage •GoldMetallization •EmitterBallasting	ASI Advanced Semiconductor
TP6401	240-OUTPUT STN COMMON DRIVER [TOPRO] 240-OUTPUTSTNCOMMONDRIVER	ETCList of Unclassifed Manufacturers 未分类制造商
TP6417T	TACT SWITCHES »Features •AdequateforP.C.Bclipboardtypeseries. •SeveralLEDcolorsoptions. •Compatibleholderisavailable. »Applications •Operatingswitchesinalltypesofelectronicequipmentsuchas audioapparatus,officeequipment,communications apparatus,TVsets,VCRs,etc.	HIGHLYHighly Electric Co., Ltd 海立电气股份有限公司
TP6449	PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-ChannelJFETs	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商
TP6450	PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-ChannelJFETs	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商
TP6451	PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-ChannelJFETs	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商
TP6452	PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-ChannelJFETs	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商
TP6453	PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-ChannelJFETs	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商
TP6454	PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-ChannelJFETs	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商
TP65H035G4QS	650V SuperGaN® FET in TOLL (source tab) Description TheTP65H035G4QS650V,35mΩgalliumnitride(GaN)FET isanormally-offdeviceusingTransphorm’sGenIVplatform. Itcombinesastate-of-the-arthighvoltageGaNHEMTwitha lowvoltagesiliconMOSFETtooffersuperiorreliabilityand performance. TheGenIVSuperGaN®platform	TRANSPHORM Transphorm
TP65H035G4QS-TR	650V SuperGaN® FET in TOLL (source tab) Description TheTP65H035G4QS650V,35mΩgalliumnitride(GaN)FET isanormally-offdeviceusingTransphorm’sGenIVplatform. Itcombinesastate-of-the-arthighvoltageGaNHEMTwitha lowvoltagesiliconMOSFETtooffersuperiorreliabilityand performance. TheGenIVSuperGaN®platform	TRANSPHORM Transphorm
TP65H035G4WSQA	650V SuperGaN® FET in TO-247 (source tab) Description TheTP65H035G4WSQS650V,35mΩgalliumnitride(GaN) FETisanormally-offdeviceusingTransphorm’sGenIV platform.Itcombinesastate-of-the-arthighvoltageGaN HEMTwithalowvoltagesiliconMOSFETtooffersuperior reliabilityandperformance. TheGenIVSuperGaN®platfor	TRANSPHORM Transphorm
TP65H035G4YS	650V SuperGaN® FET in TO-247 (source tab) Description TheTP65H035G4YS650V,35mΩgalliumnitride(GaN)FET isanormally-offdeviceusingTransphorm’sGenIVplatform. Itcombinesastate-of-the-arthighvoltageGaNHEMTwitha lowvoltagesiliconMOSFETtooffersuperiorreliabilityand performance. TheGenIVSuperGaN®platform	TRANSPHORM Transphorm
TP65H050G4BS	650V SuperGaN® FET in TO-263 (source tab) Description TheTP65H050G4BS650V,50mΩgalliumnitride(GaN)FET isanormally-offdeviceusingTransphorm’sGenIVplatform. Itcombinesastate-of-the-arthighvoltageGaNHEMTwitha lowvoltagesiliconMOSFETtooffersuperiorreliabilityand performance. TheGenIVSuperGaN®platform	TRANSPHORM Transphorm
TP65H050G4QS	650V SuperGaN® FET in TOLL (source tab) Description TheTP65H050G4QS650V,50mΩgalliumnitride(GaN)FET isanormally-offdeviceusingTransphorm’sGenIVplatform. Itcombinesastate-of-the-arthighvoltageGaNHEMTwith lowvoltagesiliconMOSFETtooffersuperiorreliabilityand performance. TheGenIVSuperGaN®platformus	TRANSPHORM Transphorm
TP65H050G4QS-TR	650V SuperGaN® FET in TOLL (source tab) Description TheTP65H050G4QS650V,50mΩgalliumnitride(GaN)FET isanormally-offdeviceusingTransphorm’sGenIVplatform. Itcombinesastate-of-the-arthighvoltageGaNHEMTwith lowvoltagesiliconMOSFETtooffersuperiorreliabilityand performance. TheGenIVSuperGaN®platformus	TRANSPHORM Transphorm
TP65H050G4WS	650V SuperGaN® FET in TO-247 (source tab) Description TheTP65H050G4WS650V,50mΩgalliumnitride(GaN) FETisanormally-offdeviceusingTransphorm’sGenIV platform.Itcombinesastate-of-the-arthighvoltageGaN HEMTwithalowvoltagesiliconMOSFETtooffersuperior reliabilityandperformance. TheGenIVSuperGaN®platform	TRANSPHORM Transphorm
TP65H050G4YS	650V SuperGaN® FET in TO-247 (source tab) Description TheTP65H050G4YS650V,50mΩgalliumnitride(GaN)FET isanormally-offdeviceusingTransphorm’sGenIVplatform. Itcombinesastate-of-the-arthighvoltageGaNHEMTwitha lowvoltagesiliconMOSFETtooffersuperiorreliabilityand performance. TheGenIVSuperGaN®platform	TRANSPHORM Transphorm
TP65H070G4LSG	650V SuperGaN® GaN FET in PQFN (source tab) Description TheTP65H070G4LSG650V,72mΩGalliumNitride(GaN)FETisanormally-offdevice.Itcombinesstate-of-the-arthighvoltageGaNHEMTandlowvoltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformance. TheGenIVSuperGaN®platformusesadvancedepiandpatented	TRANSPHORM Transphorm
TP65H070G4LSGB	650V SuperGaN® GaN FET in PQFN (source tab) Description TheTP65H070G4LSGB650V,72mΩGalliumNitride(GaN) FETisanormally-offdevice.Itcombinesstate-of-the-arthigh voltageGaNHEMTandlowvoltagesiliconMOSFET technologies—offeringsuperiorreliabilityandperformance. TheGenIVSuperGaN®platformusesadvancedepiand pate	TRANSPHORM Transphorm
TP65H070G4LSGB-TR	650V SuperGaN® GaN FET in PQFN (source tab) Description TheTP65H070G4LSGB650V,72mΩGalliumNitride(GaN) FETisanormally-offdevice.Itcombinesstate-of-the-arthigh voltageGaNHEMTandlowvoltagesiliconMOSFET technologies—offeringsuperiorreliabilityandperformance. TheGenIVSuperGaN®platformusesadvancedepiand pate	TRANSPHORM Transphorm
TP65H070G4LSG-TR	650V SuperGaN® GaN FET in PQFN (source tab) Description TheTP65H070G4LSG650V,72mΩGalliumNitride(GaN)FETisanormally-offdevice.Itcombinesstate-of-the-arthighvoltageGaNHEMTandlowvoltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformance. TheGenIVSuperGaN®platformusesadvancedepiandpatented	TRANSPHORM Transphorm
TP65H070G4PS	650V SuperGaN® GaN FET in PQFN (source tab) Description TheTP65H070G4PS650V,72mΩGalliumNitride(GaN)FETisanormally-offdevice.Itcombinesstate-of-the-arthighvoltageGaNHEMTandlowvoltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformance. TheGenIVSuperGaN®platformusesadvancedepiandpatentedd	TRANSPHORM Transphorm
TP65H070G4QS	650V SuperGaN® FET in TOLL (source tab) Description TheTP65H070G4QS650V,72mΩgalliumnitride(GaN)FETisanormally-offdeviceusingTransphorm’sGenIVplatform.Itcombinesastate-of-the-arthighvoltageGaNHEMTwithalowvoltagesiliconMOSFETtooffersuperiorreliabilityandperformance. TheGenIVSuperGaN®platformuses	TRANSPHORM Transphorm
TP65H070G4QS-TR	650V SuperGaN® FET in TOLL (source tab) Description TheTP65H070G4QS650V,72mΩgalliumnitride(GaN)FETisanormally-offdeviceusingTransphorm’sGenIVplatform.Itcombinesastate-of-the-arthighvoltageGaNHEMTwithalowvoltagesiliconMOSFETtooffersuperiorreliabilityandperformance. TheGenIVSuperGaN®platformuses	TRANSPHORM Transphorm
TP65H070G4RS	650V SuperGaN® GaN FET in PQFN (source tab) Description TheTP65H070G4RS650V,72mΩGalliumNitride(GaN)FETisanormally-offdevice.Itcombinesstate-of-the-arthighvoltageGaNHEMTandlowvoltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformance. TheGenIVSuperGaN®platformusesadvancedepiandpatentedd	TRANSPHORM Transphorm
TP65H070G4RS-TR	650V SuperGaN® GaN FET in PQFN (source tab) Description TheTP65H070G4RS650V,72mΩGalliumNitride(GaN)FETisanormally-offdevice.Itcombinesstate-of-the-arthighvoltageGaNHEMTandlowvoltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformance. TheGenIVSuperGaN®platformusesadvancedepiandpatentedd	TRANSPHORM Transphorm
TP65H070L	650V GaN FET PQFN Series Description TheTP65H070LSeries650V,72mΩGalliumNitride(GaN) FETarenormally-offdevices.Theycombinestate-of-the-art highvoltageGaNHEMTandlowvoltagesiliconMOSFET technologies—offeringsuperiorreliabilityandperformance. Features •JEDECqualifiedGaNtechnology •Dynami	TRANSPHORM Transphorm
TP65H070LDG-TR	650V GaN FET PQFN Series Description TheTP65H070LSeries650V,72mΩGalliumNitride(GaN) FETarenormally-offdevices.Theycombinestate-of-the-art highvoltageGaNHEMTandlowvoltagesiliconMOSFET technologies—offeringsuperiorreliabilityandperformance. Features •JEDECqualifiedGaNtechnology •Dynami	TRANSPHORM Transphorm
TP65H070LSG-TR	650V GaN FET PQFN Series Description TheTP65H070LSeries650V,72mΩGalliumNitride(GaN) FETarenormally-offdevices.Theycombinestate-of-the-art highvoltageGaNHEMTandlowvoltagesiliconMOSFET technologies—offeringsuperiorreliabilityandperformance. Features •JEDECqualifiedGaNtechnology •Dynami	TRANSPHORM Transphorm
TP65H150BG4JSG	650V SuperGaN GaN FET in PQFN (source tab) Description TheTP65H150BG4JSG650V,150mΩGalliumNitride(GaN)FETisanormally-offdeviceusingTransphorm’sGenIVplatform.Itcombinesastate-of-the-arthighvoltageGaNHEMTwithalowvoltagesiliconMOSFETtooffersuperiorreliabilityandperformance. TheGenIVSuperGaN®platformus	TRANSPHORM Transphorm
TP65H150BG4JSG-TR	650V SuperGaN GaN FET in PQFN (source tab) Description TheTP65H150BG4JSG650V,150mΩGalliumNitride(GaN)FETisanormally-offdeviceusingTransphorm’sGenIVplatform.Itcombinesastate-of-the-arthighvoltageGaNHEMTwithalowvoltagesiliconMOSFETtooffersuperiorreliabilityandperformance. TheGenIVSuperGaN®platformus	TRANSPHORM Transphorm
TP65H150G4LSG	650V SuperGaN GaN FET in PQFN (source tab) Description TheTP65H150G4LSG650V,150mΩGalliumNitride(GaN)FETisanormally-offdevice.Itcombinesstate-of-the-arthighvoltageGaNHEMTandlowvoltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformance. TheGenIVSuperGaN®platformusesadvancedepiandpatented	TRANSPHORM Transphorm
TP65H150G4LSGB	650V SuperGaN® GaN FET in PQFN (source tab) Description TheTP65H150G4LSGB650V,150mΩGalliumNitride (GaN)FETisanormally-offdeviceusingTransphorm’sGen IVplatform.Itcombinesastate-of-the-arthighvoltageGaN HEMTwithalowvoltagesiliconMOSFETtooffersuperior reliabilityandperformance. TheGenIVSuperGaN®platfor	TRANSPHORM Transphorm
TP65H150G4LSGBE	650V SuperGaN® GaN FET in PQFN (source tab) Features ■GenIVtechnology ■JEDEC-qualifiedGaNtechnology ■DynamicRDS(on)effproductiontested ■Robustdesign,definedby ●Transientover-voltagecapability ●OperationwithE-modeGatedriverswithout needforZenerprotection. ■VerylowQRR ■Reducedcrossoverloss ■RoHScomp	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
TP65H150G4LSGBE-TR	650V SuperGaN® GaN FET in PQFN (source tab) Features ■GenIVtechnology ■JEDEC-qualifiedGaNtechnology ■DynamicRDS(on)effproductiontested ■Robustdesign,definedby ●Transientover-voltagecapability ●OperationwithE-modeGatedriverswithout needforZenerprotection. ■VerylowQRR ■Reducedcrossoverloss ■RoHScomp	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司
TP65H150G4LSGB-TR	650V SuperGaN® GaN FET in PQFN (source tab) Description TheTP65H150G4LSGB650V,150mΩGalliumNitride (GaN)FETisanormally-offdeviceusingTransphorm’sGen IVplatform.Itcombinesastate-of-the-arthighvoltageGaN HEMTwithalowvoltagesiliconMOSFETtooffersuperior reliabilityandperformance. TheGenIVSuperGaN®platfor	TRANSPHORM Transphorm
TP65H150G4LSG-TR	650V SuperGaN GaN FET in PQFN (source tab) Description TheTP65H150G4LSG650V,150mΩGalliumNitride(GaN)FETisanormally-offdevice.Itcombinesstate-of-the-arthighvoltageGaNHEMTandlowvoltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformance. TheGenIVSuperGaN®platformusesadvancedepiandpatented	TRANSPHORM Transphorm
TP65H150G4PS	650V SuperGaN® GaN FET in TO-220 (source tab) Description TheTP65H150G4PS650V,150mΩGalliumNitride(GaN)FETisanormally-offdevice.Itcombinesstate-of-the-arthighvoltageGaNHEMTandlowvoltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformance. TheGenIVSuperGaN®platformusesadvancedepiandpatented	TRANSPHORM Transphorm
TP65H300G4JSGB	650V SuperGaN® GaN FET in PQFN (source tab) Description TheTP65H300G4JSGB650V,240mΩGalliumNitride(GaN) FETisanormally-offdeviceusingTransphorm’sGenIV platform.Itcombinesastate-of-the-arthighvoltageGaN HEMTwithalowvoltagesiliconMOSFETtooffersuperior reliabilityandperformance. TheGenIVSuperGaN®platfor	TRANSPHORM Transphorm
TP65H300G4JSGB-TR	650V SuperGaN® GaN FET in PQFN (source tab) Description TheTP65H300G4JSGB650V,240mΩGalliumNitride(GaN) FETisanormally-offdeviceusingTransphorm’sGenIV platform.Itcombinesastate-of-the-arthighvoltageGaN HEMTwithalowvoltagesiliconMOSFETtooffersuperior reliabilityandperformance. TheGenIVSuperGaN®platfor	TRANSPHORM Transphorm
TP65H300G4LSG	650V SuperGaN® FET in PQFN (source tab) Description TheTP65H300G4LSG650V,240mΩgalliumnitride(GaN)FETisanormally-offdeviceusingTransphorm’sGenIVplatform.Itcombinesastate-of-the-arthighvoltageGaNHEMTwithalowvoltagesiliconMOSFETtooffersuperiorreliabilityandperformance. TheGenIVSuperGaN®platformus	TRANSPHORM Transphorm

TP6产品属性

类型
描述
型号
TP6
制造商
GREATECS
制造商全称
GREATECS
功能描述
6 x 3.5 mm Tactile Switches

TP6供应商更多...

更新时间：2025-7-8 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	TP61040DBVR	TI(德州仪器)	24+	SOY23-5	60748	原厂可订货,技术支持,直接渠道。可签保供合同	询价
深圳市粤骏腾电子科技有限公司	TP6002-SR	3PEAK/思瑞浦	24+	SOP-8	63225	绝对原厂原装,长期优势可定货	询价
中天科工半导体（深圳）有限公司	TP62203DBVR	Texas Instruments	24+	SOT23-5	18331	TI优势主营型号-原装正品	询价
深圳市弘扬芯城科技有限公司	TP6841S6-A	TECH PUBLIC(台舟)	24+	SOT-23-6	5000	诚信服务,绝对原装原盘。	询价
深圳市羿芯诚电子有限公司	TP6731QXE	TOPRO	20+	QFP	2860	原厂原装正品价格优惠公司现货欢迎查询	询价
深圳市宏世佳电子科技有限公司	TP6311Q	TOPRO	2025+	QFP	3783	全新原装、公司现货热卖	询价
深圳市力拓辉电子有限公司	TP6902WB28H	TENX	21+	HSOP	250000	全新原装鄙视假货	询价
万三科技(深圳)有限公司	TP6001R-TR	3PEAK(思瑞浦)	22+	NA	500000	万三科技,秉承原装,购芯无忧	询价
深圳市鸿昌盛电子科技有限公司	TP6311		2015+		2	公司现货库存	询价
深圳市明嘉莱科技有限公司	TP6002-SR	3PEAK	25+	SOP8	518000	明嘉莱只做原装正品现货	询价