TOSLINK Optical Receiving Modules for High-Speed Data Transmission

Compatible Optical Fiber with Connectors：CF-1071 (HG-20/80) Series (Sumitomo Electric Industries) / LUCT1-TC1000-**M (Asahi Kasei E-Materials) / LUCT3-TC1000-**M (Asahi Kasei E-Materials) / TOCP100-**MBT (Toray Industries) / TOCP155-**MBT (Toray Industries)\nCompatible Optical Fiber (μm)：APF (980/10 Operating Temperature (Max) Topr 70 ℃ \nOperating Temperature (Min) Topr -10 ℃ \nSupply Voltage (Max) VCC 3.6 V \nSupply Voltage (Min) VCC 3.0 V ;

TOSLINK Optical Receiving Modules for High-Speed Data Transmission

Compatible Optical Fiber with Connectors：CF-1071 (HG-20/80) Series (Sumitomo Electric Industries) / LUCT1-TC1000-**M (Asahi Kasei E-Materials) / LUCT3-TC1000-**M (Asahi Kasei E-Materials) / TOCP100-**MBT (Toray Industries) / TOCP155-**MBT (Toray Industries)\nCompatible Optical Fiber (μm)：APF (980/10 Operating Temperature (Max) Topr 70 ℃ \nOperating Temperature (Min) Topr -10 ℃ \nSupply Voltage (Max) VCC 3.6 V \nSupply Voltage (Min) VCC 3.0 V ;

VSC system processor IC

The BA1701 is a monolithic audio-compression system controller IC that uses VSC∗. When used in combination with an analog delay circuit and low-pass filter, it can replay recorded audio at 1 to 2.5 times the recording speed, without altering the pitch. Features 1) Wide operating voltage range

SURFACE MOUNT SWITCHING DIODES

Case : SOT-23 Molded Plastic Operating Temperature : -65°C to 150°C

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. FEATURES • 2.5 V gate drive and low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. FEATURES • 2.5 V gate drive and low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3

PHS MULTI-FUNCTION GaAs MMIC

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