Enhanced EcoSmart, Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range

Description TOPSwitch-HX cost effectively incorporates a 700 V power MOSFET, high voltage switched current source, PWM control, oscillator, thermal shutdown circuit, fault protection and other control circuitry onto a monolithic device. Product Highlights Lower System Cost, Higher Design Flexib

Enhanced EcoSmart, Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range

Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes efficiency at all loads • New eSIP-7F and eSIP-7C packages • Low thermal impedance junction-to-case (2 °C per watt) • Low height is ideal for adapters where space is limited • Simple mounting using a clip to aid low

Enhanced EcoSmart, Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range

文件：1.90367 Mbytes Page：48 Pages

封装/外壳：7-SSIP，6 引线，裸露焊盘，成形引线 包装：卷带（TR） 描述：IC OFFLINE SWITCH FLYBACK 7FESIP 集成电路（IC） AC DC 转换器，离线开关

采用增强的EcoSmart技术的集成离线式开关，具有先进的特性和扩展的功率范围

Enhanced EcoSmart, Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range

Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes efficiency at all loads • New eSIP-7F and eSIP-7C packages • Low thermal impedance junction-to-case (2 °C per watt) • Low height is ideal for adapters where space is limited • Simple mounting using a clip to aid low

PNP video transistors

DESCRIPTION PNP video transistor in a SOT128B (TO-202) plastic package. NPN complements: BFQ235 and BFQ235A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability.

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

N-CHANNEL BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 54 MHz. The high gain, broadband performance and linear characterization of this device makes it ideal for large–signal, common source a

RF Power Field-Effect Transistor

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode

Silicon NPN Transistor Horizontal Driver, Amp

文件：20.08 Kbytes Page：2 Pages