Enhanced EcoSmart, Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range

Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes efficiency at all loads • New eSIP-7F and eSIP-7C packages • Low thermal impedance junction-to-case (2 °C per watt) • Low height is ideal for adapters where space is limited • Simple mounting using a clip to aid low

采用增强的EcoSmart技术的集成离线式开关，具有先进的特性和扩展的功率范围

TOPSwitch-HX在一个单片器件上集成了一个700 V的功率MOSFET、高压开关电流源、PWM控制器、振荡器、热关断电路、故障保护及其他控制电路。 更低的系统成本，更高的设计灵活性\r\n• 多模式工作方式可实现在各种负载下的效率最大化\r\n• 基于PI在高功率和高可靠性封装方面的经验开发的全新eSIP-7C和eSIP-7F封装\r\n• P、G或M封装无需使用散热片最大输出功率可达35 W，230 VAC时最大输出功率达48 W\r\n• 输出过压保护(OVP)可由用户对锁存/非锁存关断功能进行编程，并可快速进行AC重置\r\n• 线电压欠压(UV)检测可以防止关机时的输出脉冲干扰\r\n• 线电压过压(OV)关断电路提高了对输入浪涌的耐受力\r\n• 精确可编程的电流限流\r\n• 优化的线电压前馈，用于抑制线电压纹波\r\n• 1;

封装/外壳：7-SSIP，6 引线，裸露焊盘，成形引线 包装：卷带（TR） 描述：IC OFFLINE SWITCH FLYBACK 7ESIP 集成电路（IC） AC DC 转换器，离线开关

Enhanced EcoSmart, Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range

Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes efficiency at all loads • New eSIP-7F and eSIP-7C packages • Low thermal impedance junction-to-case (2 °C per watt) • Low height is ideal for adapters where space is limited • Simple mounting using a clip to aid low

PNP video transistors

DESCRIPTION PNP video transistor in a SOT128B (TO-202) plastic package. NPN complements: BFQ235 and BFQ235A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability.

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

N-CHANNEL BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 54 MHz. The high gain, broadband performance and linear characterization of this device makes it ideal for large–signal, common source a

RF Power Field-Effect Transistor

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode

Silicon NPN Transistor Horizontal Driver, Amp

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