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TO263价格

参考价格:¥173.6437

型号:TO263-3EV-VREG 品牌:Microchip 备注:这里有TO263多少钱,2026年最近7天走势,今日出价,今日竞价,TO263批发/采购报价,TO263行情走势销售排行榜,TO263报价。
型号 功能描述 生产厂家 企业 LOGO 操作
TO263

SUGGESTED PAD LAYOUT

文件:188.29 Kbytes Page:14 Pages

DIODES

美台半导体

TO263

SUGGESTED PAD LAYOUT

文件:404.18 Kbytes Page:27 Pages

DIODES

美台半导体

TO263

Package Outline

文件:149.43 Kbytes Page:1 Pages

GMT

致新科技

TO263

Dimension L is Measured in gaguge line

文件:110.97 Kbytes Page:1 Pages

AOSMD

万国半导体

TO263

Package Outline Drawing Transistor Outline

文件:90.16 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

丝印代码:TO263-5L;50KHz, 2A/3A PWM BUCK DC/DC CONVERTER

Features • Output voltage: 3.3V, 5V, 12V and adjustable output version • Adjustable version output voltage range, 1.23V to 37V+4% • 50KHz +15% fixed switching frequency • Voltage mode non-synchronous PWM control • Thermal-shutdown and current-limit protection • ON/OFF shutdown cont

DIODES

美台半导体

丝印代码:TO263-5L;50KHz, 2A/3A PWM BUCK DC/DC CONVERTER

Features • Output voltage: 3.3V, 5V, 12V and adjustable output version • Adjustable version output voltage range, 1.23V to 37V+4% • 50KHz +15% fixed switching frequency • Voltage mode non-synchronous PWM control • Thermal-shutdown and current-limit protection • ON/OFF shutdown cont

DIODES

美台半导体

包装:盒 描述:BOARD EVAL TO220-3/TO263-3 VREG 开发板,套件,编程器 评估板 - 线性稳压器

MICROCHIP

微芯科技

Package Outline

文件:138.32 Kbytes Page:1 Pages

GMT

致新科技

SUGGESTED PAD LAYOUT

文件:404.18 Kbytes Page:27 Pages

DIODES

美台半导体

SUGGESTED PAD LAYOUT

文件:188.29 Kbytes Page:14 Pages

DIODES

美台半导体

包装:盒 描述:EVAL BOARD VREG TO220-5/TO263-5 开发板,套件,编程器 评估板 - 线性稳压器

MICROCHIP

微芯科技

Operating ond Stomgo Temperature

文件:153.87 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Package Outline

文件:207.67 Kbytes Page:1 Pages

GMT

致新科技

Package Outline

文件:144.09 Kbytes Page:1 Pages

GMT

致新科技

SMALL OUTLINE OPTOISOLATORS DARLINGTON OUTPUT NO BASE CONNECTION

Small Outline Optoisolators Darlington Output (No Base Connection) These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. No base connection for improved noise

MOTOROLA

摩托罗拉

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 T

NTE

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 25 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 175 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

POINN

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 25 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 175 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

POINN

Darlington Phototransistor

文件:50.6 Kbytes Page:2 Pages

PANASONIC

松下

TO263产品属性

  • 类型

    描述

  • 型号

    TO263

  • 功能描述

    Package Outline Drawing Transistor Outline

更新时间:2026-8-1 11:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
23+
TO-263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
VISHAY
TO-263
50000

TO263数据表相关新闻