Bi-directional Glass passivated junction

Sample Instructions for Choosing a Packing Option (1) If selecting an “L401E6” (sensitive gate, 400 V, 1 A triac in a TO-92 package), choose one of the options available for that device: • Bulk packed in 2,000 quantity • Tape and Reel with 2,000 parts per reel • Tape and Ammo with 2,

Packaging specifications

surface mounting type

1A LOW DROPOUT LINEAR REGULATOR

GENERAL DESCRIPTION The CJ1117 is a series of low dropout three-terminal regulators with a dropout of 1.15V at 1A output current. The CJ1117 series provides current limiting and thermal shutdown. Its circuit includes a trimmed bandgap reference to assure output voltage accuracy to be within

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1.75 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

1A LOW DROPOUT LINEAR REGULATOR

GENERAL DESCRIPTION The CJ1117 is a series of low dropout three-terminal regulators with a dropout of 1.15V at 1A output current. The CJ1117 series provides current limiting and thermal shutdown. Its circuit includes a trimmed bandgap reference to assure output voltage accuracy to be within

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Channel style heat sink with folded back fins

Channel style heat sink with folded back fins for increased cooling surface area. Available with tin plated solderable tabs for easy attachment to the printed circuit card.

SCHOTTKY BARRIER RECTIFIER

FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

SCHOTTKY BARRIER RECTIFIER

FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TO-220 (3 leads) Thru-hole Plastic Package

Package Outline, Tube Packing, Packaging and Handling Information

Sample Instructions for Choosing a Packing Option

Description The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or drops be

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

Sample Instructions for Choosing a Packing Option

Description The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance region to a low on-state voltage. Conduction continues until the current is interrupted or drops be

SCHOTTKY BARRIER RECTIFIER

FEATURES ▪ Schottky Barrier Chip ▪ Guard Ring Die Construction for Transient Protection ▪ Low Power Loss, High Efficiency ▪ High Surge Capability ▪ High Current Capability and Low Forward Voltage Drop ▪ For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protect

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 10 A Collector-base voltage V(BR)CBO: 70 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

SCHOTTKY BARRIER RECTIFIER

FEATURES • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protect

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

1A LOW DROPOUT LINEAR REGULATOR

GENERAL DESCRIPTION The CJ1117 is a series of low dropout three-terminal regulators with a dropout of 1.15V at 1A output current. The CJ1117 series provides current limiting and thermal shutdown. Its circuit includes a trimmed bandgap reference to assure output voltage accuracy to be within

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.5 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

100V, N-CHANNEL SGT MOSFET

DESCRIPTION The AM12NS10H is available in a TO-220, TO-220F, TO-252, TO-251, SOP8, TO-263-2 and PDFN8(5x6) FEATURES  Fast Switching  Low On-Resistance (RDS(ON) ≤12mΩ)  Low Gate Charge  Low Reverse transfer capacitances  High avalanche ruggedness APPLICATION  Synchronous rectifi

TO-220 BIPOLAR TRANSISTORS

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Three-terminal positive voltage regulator

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Three-terminal positive voltage regulator

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TRANSISTOR (PNP)

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TRANSISTOR (NPN)

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TO-220 and TO-247 Style Power Resistor

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Three-terminal positive voltage regulator

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Sample Instructions for Choosing a Packing Option

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TRANSISTOR SPRING CLIPS

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SCHOTTKY BARRIER RECTIFIER

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3 Amp Positive Voltage Regulator

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Three-terminal positive voltage regulator

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Sample Instructions for Choosing a Packing Option

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TRIAC

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SCHOTTKY BARRIER RECTIFIER

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Three-terminal positive voltage regulator

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Three-terminal positive voltage regulator

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塑封功率型电阻器

SCHOTTKY BARRIER RECTIFIER

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Three-terminal positive voltage regulator

文件：162.87 Kbytes Page：1 Pages

Sample Instructions for Choosing a Packing Option

文件：306.92 Kbytes Page：8 Pages

Three-terminal positive voltage regulator

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Three-terminal positive voltage regulator

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TRANSISTOR (PNP)

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TRANSISTOR (NPN)

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TO-220AC (2 Lead) Leaded Plastic Package

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16.0AMP. Glass Passivated Super Fast Rectifiers

Features ◇ High efficiency, low VF ◇ High current capability ◇ High reliability ◇ High surge current capability ◇ Low power loss. ◇ For use in low voltage, high frequency inventor, free wheeling, and polarity protection application

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 --- 100 V CURRENT: 10 A Features ◇ Metal-Semiconductor junction with guard ring ◇ Epitaxial construction ◇ Low forward voltage drop,low switching losses ◇ High surge capability ◇ For use in low voltage,high frequency inverters free wheeling,and polarity pro

Dual Common-Cathode Ultrafast Plastic Rectifier

FEATURES • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max. 10 s, per JESD 22-B10

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo

20A Dual Schottky Barrier Rectifier

20A Dual Schottky Barrier Rectifier Features ! Schottky Barrier Chip ! Guard Ring for Transient Protection ! Low Forward Voltage Drop ! Low Reverse Leakage Current ! High Surge Current Capability ! Plastic Material has UL Flammability Classification 94V-O

Dual Schottky Rectifiers

REVERSE VOLTAGE: 20 - 60 V FORWARD CURRENT: 10 A Features ◇ Metal-semiconductor junction with guard ring ◇ Epitaxial construction ◇ For use in low voltage,high frequency inverters free wheeling,and polarity protection applications ◇ Low forward voltage drop,low switching losses ◇ High surge

Fast Recovery Rectifiers

Features ◇ Low cost ◇ Diffused junction ◇ Low leakage ◇ Low forward voltage drop ◇ High current capability ◇ Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents ◇ The plastic material carries U/L recognition 94V-0

10.0AMP. Schottky Barrier Rectifiers

Features Low power loss, high efficiency. High current capability, Low VF.
High reliability High surge current capability.
Epitaxial construction. Guard-ring for transient protection. For use in low voltage, high frequency inventor, free wheeling, and polarity protection app

Isolated 10AMP. Glass Passivated Fast Recovery Rectifiers

Features ♦ Glass passivated chip junction. ♦ High efficiency, Low VF ♦ High current capability ♦ High reliability ♦ High surge current capability ♦ Low power loss

20.0AMP. Schottky Barrier Rectifiers

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

16.0AMP. Schottky Barrier Rectifiers

Features ◇ Low power loss, high efficiency. ◇ High current capability, Low VF. ◇ High reliability ◇ High surge current capability. ◇ Epitaxial construction. ◇ Guard-ring for transient protection. ◇ For use in low voltage, high frequency inventor, free wheeling, and polarity protection appli

16AMP. Glass Passivated High Efficient Rectifiers

Features ◇ Glass passivated chip junction. ◇ High efficiency, Low VF ◇ High current capability ◇ High reliability ◇ High surge current capability ◇ For use in low voltage, high frequency inventor, free wheeling, and polarity protection application.