Enhanced, Energy Efficient, Low Power Off-line Switcher

Description TinySwitch-II integrates a 700 V power MOSFET, oscillator, high voltage switched current source, current limit and thermal shutdown circuitry onto a monolithic device. The start-up and operating power are derived directly from the voltage on the DRAIN pin, eliminating the need for a b

Enhanced, Energy Effi cient, Low Power Off-line Switcher

Enhanced, Energy Efficient, Low Power Off-line Switcher Description TinySwitch-IIintegrates a 700 V power MOSFET, oscillator, high voltage switched current source, current limit and thermal shutdown circuitry onto a monolithic device. The start-up and operating power are derive

0-23 W高效率、低成本的解决方案

• 用于短路及开环故障保护的完全集成自动重启动功能 – 节约外部元件成本\r\n• 可编程的线电压欠压检测特性可以防止电源开关在通断电期间出现输出脉冲干扰 – 节省外部元件\r\n• 频率抖动功能极大地降低了电磁干扰 (~10 dB) – 使EMI滤波器元件成本降到最小\r\n• 132 kHz操作频率减小了变压器尺寸 – 允许使用EF12.6或EE13磁芯，从而降低了成本，缩小了电源尺寸\r\n• 即使使用普通的清漆浸渍变压器，内置电路也基本消除了变压器的噪音;

封装/外壳：8-SMD（7 个接脚），鸥翼 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC OFFLINE SWITCH FLYBACK 8SMD 集成电路（IC） AC DC 转换器，离线开关

Enhanced, Energy Effi cient, Low Power Off-line Switcher

Enhanced, Energy Efficient, Low Power Off-line Switcher Description TinySwitch-IIintegrates a 700 V power MOSFET, oscillator, high voltage switched current source, current limit and thermal shutdown circuitry onto a monolithic device. The start-up and operating power are derive

Enhanced, Energy Efficient, Low Power Off-line Switcher

Description TinySwitch-II integrates a 700 V power MOSFET, oscillator, high voltage switched current source, current limit and thermal shutdown circuitry onto a monolithic device. The start-up and operating power are derived directly from the voltage on the DRAIN pin, eliminating the need for a b

封装/外壳：8-SMD（7 个接脚），鸥翼 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC OFFLINE SWITCH FLYBACK 8SMD 集成电路（IC） AC DC 转换器，离线开关

SMALL OUTLINE OPTOISOLATORS DARLINGTON OUTPUT NO BASE CONNECTION

Small Outline Optoisolators Darlington Output (No Base Connection) These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. No base connection for improved noise

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 T

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 25 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 175 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 25 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 175 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

Darlington Phototransistor

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