PNP General Purpose Amplifier

PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA and collector voltages up to 70V. Sourced from Process 67.

PNP General Purpose Amplifier

文件：447.3 Kbytes Page：9 Pages

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS PNP 80V 1A TO226-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP General Purpose Amplifier

PNP General Purpose Amplifier

文件：447.3 Kbytes Page：9 Pages

封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：散装 描述：TRANS PNP 80V 1A TO226 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

7-SEGMENT DISPLAY OUTPUTS DECADE COUNTERS/DIVIDERS WITH DECODED

DESCRIPTION The HCC4026B/4033B (extended temperature range) and HCF4026B/4033B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4026B and HCC/HCF4033B each consist of a 5-stage

7-SEGMENT DISPLAY OUTPUTS DECADE COUNTERS/DIVIDERS WITH DECODED

DESCRIPTION The HCC4026B/4033B (extended temperature range) and HCF4026B/4033B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4026B and HCC/HCF4033B each consist of a 5-stage

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS ...designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res