POWER TRANSISTORS(16A,60-100V,150W)

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS ...designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Res

Power Transistors

Power Transistors TO-3 Case (Continued)

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Respectively complement to type MJ4030/4031/4032 • DARLINGTON • High DC current gain APPLICATIONS • For use as output devices in complementary general purpose amplifier applications

MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS

MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS They are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use as output devices in complementary general purpose amplifier applications. The compleme

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Respectively complement to type MJ4030/4031/4032 • DARLINGTON • High DC current gain APPLICATIONS • For use as output devices in complementary general purpose amplifier applications

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS ...designed for use as output devices in complementary general purpose amplifier applications FEATURES: * High Gain Darlington Performance * DCCurrent Gain hFE = 3500(Typ) @ lc = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Resi

Silicon NPN Power Transistor

DESCRIPTION · High DC Current Gain- : hFE= 1000@ IC= 3A · Low Collector Saturation Voltage- : VCE(sat)=4.0V(Min.)@ IC= 16A APPLICATIONS · Designed for use in industrial-military power amplifier and switching circuit applications.

150W NPN Darlington BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Trans Darlington NPN 60V 16A 3-Pin(2+Tab) TO-3 Sleeve

Transistor

Silicon NPN Power Transistors

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MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS

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MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS

文件：79.24 Kbytes Page：3 Pages

7-SEGMENT DISPLAY OUTPUTS DECADE COUNTERS/DIVIDERS WITH DECODED

DESCRIPTION The HCC4026B/4033B (extended temperature range) and HCF4026B/4033B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4026B and HCC/HCF4033B each consist of a 5-stage

7-SEGMENT DISPLAY OUTPUTS DECADE COUNTERS/DIVIDERS WITH DECODED

DESCRIPTION The HCC4026B/4033B (extended temperature range) and HCF4026B/4033B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4026B and HCC/HCF4033B each consist of a 5-stage

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V