| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TN4012 | RF AMPLIFIER MODEL 文件：42.06 Kbytes Page：1 Pages | APITECH |   | |
Trench MOSFET | TNSEMI | | ||
NAND GATES DESCRIPTION The HCC4011B, HCC4012B and HCC4023B (extended temperature range) and HCF4011B, HCF4012B and HCF4023B (intermediate temperature range) are monolithic, integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micropackage. The HCC/HCF4011B, HCC/HCF40 | STMICROELECTRONICS 意法半导体 | | ||
NAND GATES DESCRIPTION The HCC4011B, HCC4012B and HCC4023B (extended temperature range) and HCF4011B, HCF4012B and HCF4023B (intermediate temperature range) are monolithic, integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micropackage. The HCC/HCF4011B, HCC/HCF40 | STMICROELECTRONICS 意法半导体 | | ||
Dual 4-input NAND gate DESCRIPTION The HEF4012B provides the positive dual 4-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance. | PHILIPS 飞利浦 | | ||
Dual 4-input NAND gate DESCRIPTION The HEF4012B provides the positive dual 4-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance. | PHILIPS 飞利浦 | | ||
Dual 4-input NAND gate DESCRIPTION The HEF4012B provides the positive dual 4-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance. | PHILIPS 飞利浦 | |
TN4012产品属性
- 类型
描述
- VDSS(V)：
40
- ID(A)：
12
- VGS(TH)[V]：
1.8
- Polarity：
N
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SI台湾雷达公司 |
24+ |
TO-92 |
489 |
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DdatasheetPDF页码索引
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