High temperature 20 A SCRs

Features  High junction temperature: Tj = 150 °C  High noise immunity dV/dt = 400 V/μs up to 150 °C  Gate triggering current IGT = 10 mA  Peak off-state voltage VDRM/VRRM = 600 V  High turn on current rise dI/dt = 100 A/μs  ECOPACK®2 compliant component Description Packaged in a no

封装/外壳：TO-220-3 包装：管件 描述：SCR 600V 20A TO220AB 分立半导体产品 晶闸管 - SCR

High temperature 20 A SCRs

Features  High junction temperature: Tj = 150 °C  High noise immunity dV/dt = 400 V/μs up to 150 °C  Gate triggering current IGT = 10 mA  Peak off-state voltage VDRM/VRRM = 600 V  High turn-on current rise dI/dt = 100 A/μs  ECOPACK®2 compliant component  TO-220FPAB insulated package:

High temperature 20 A SCRs

Features  High junction temperature: Tj = 150 °C  High noise immunity dV/dt = 400 V/μs up to 150 °C  Gate triggering current IGT = 10 mA  Peak off-state voltage VDRM/VRRM = 600 V  High turn on current rise dI/dt = 100 A/μs  ECOPACK®2 compliant component Description This device offe

High temperature 20 A SCRs

Features  High junction temperature: Tj = 150 °C  High noise immunity dV/dt = 400 V/μs up to 150 °C  Gate triggering current IGT = 10 mA  Peak off-state voltage VDRM/VRRM = 600 V  High turn on current rise dI/dt = 100 A/μs  ECOPACK®2 compliant component Description This device offe

20 A 600 V high temperature SCR thyristors in insulated TO-220

Features • High junction temperature: Tj max. = 150 °C • High static immunity dV/dt = 400 V/μs up to 150 °C • Peak off-state voltage VDRM/VRRM = 600 V • High turn-on current rise dI/dt = 100 A/μs • Insulated package TO-220AB: – Insulated voltage: 2500 VRMS – Complies with UL 1557 (File ref