型号 功能描述 生产厂家 企业 LOGO 操作
TMS28F010B

131072 BY 8-BIT FLASH MEMORY

文件:332.37 Kbytes Page:23 Pages

TI

德州仪器

131072 BY 8-BIT FLASH MEMORY

文件:332.37 Kbytes Page:23 Pages

TI

德州仪器

131072 BY 8-BIT FLASH MEMORY

文件:332.37 Kbytes Page:23 Pages

TI

德州仪器

131072 BY 8-BIT FLASH MEMORY

文件:332.37 Kbytes Page:23 Pages

TI

德州仪器

131072 BY 8-BIT FLASH MEMORY

TI

德州仪器

131072 BY 8-BIT FLASH MEMORY

文件:332.37 Kbytes Page:23 Pages

TI

德州仪器

131072 BY 8-BIT FLASH MEMORY

文件:332.37 Kbytes Page:23 Pages

TI

德州仪器

131072 BY 8-BIT FLASH MEMORY

文件:332.37 Kbytes Page:23 Pages

TI

德州仪器

131072 BY 8-BIT FLASH MEMORY

文件:332.37 Kbytes Page:23 Pages

TI

德州仪器

131072 BY 8-BIT FLASH MEMORY

文件:332.37 Kbytes Page:23 Pages

TI

德州仪器

1024K (128K x 8) CMOS FLASH MEMORY

28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit

Intel

英特尔

1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERAL DESCRIPTION The Am28F010 is a 1 Megabit Flash memory organized as 128 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to

AMD

超威半导体

1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

GENERAL DESCRIPTION The Am28F010A is a 1 Megabit Flash memory organized as 128 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed t

AMD

超威半导体

1 Megabit CMOS Flash Memory

DESCRIPTION The CAT28F010 is a high speed 128K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second. FEATURES ■ Fast

Catalyst

1024K (128K x 8) CMOS FLASH MEMORY

文件:300.41 Kbytes Page:23 Pages

Intel

英特尔

TMS28F010B产品属性

  • 类型

    描述

  • 型号

    TMS28F010B

  • 制造商

    TI

  • 制造商全称

    Texas Instruments

  • 功能描述

    131072 BY 8-BIT FLASH MEMORY

更新时间:2025-12-11 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI/德州仪器
24+
NA/
5965
原厂直销,现货供应,账期支持!
TI
2016+
PLCC32
9000
只做原装,假一罚十,公司可开17%增值税发票!
TI/德州仪器
25+
PLCC32
65248
百分百原装现货 实单必成
TI
24+
PLCC
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
TI/德州仪器
PLCC32
125000
一级代理原装正品,价格优势,长期供应!
23+
PLCC32
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
TI/TEXAS
NEW
PLCC-32
8931
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
TI/德州仪器
97+
PLCC32
880000
明嘉莱只做原装正品现货
TI/德州仪器
2450+
PLCC32
8850
只做原装正品假一赔十为客户做到零风险!!
TI
23+
NA
20000

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