TMP814 Variable Speed Single-phase Full-wave Fan Motor Predriver

1 Features • Predriver for Single-Phase Full-Wave Drive – PNP-NMOS is Used as an External Power TR, Enabling High-Efficiency Low-Consumption Drive by Means of the Low-Saturation Output and Single-Phase Full-Wave Drive (PMOS- NMOS Also Applicable) • External PWM Input Enabling Variable Speed

Variable Speed Single-phase Full-wave Fan Motor Predriver

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封装/外壳：20-TSSOP（0.173"，4.40mm 宽） 功能：控制器 - 速度 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC MOTOR DRIVER 6V-16V 20TSSOP 集成电路（IC） 电机驱动器，控制器

TMP814 Variable Speed Single-phase Full-wave Fan Motor Predriver

1 Features • Predriver for Single-Phase Full-Wave Drive – PNP-NMOS is Used as an External Power TR, Enabling High-Efficiency Low-Consumption Drive by Means of the Low-Saturation Output and Single-Phase Full-Wave Drive (PMOS- NMOS Also Applicable) • External PWM Input Enabling Variable Speed

Silicon Epitaxial Planar Dual Capacitance Diode

Features • Silicon Epitaxial Planar Diode • Common cathode • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications     Tuning of separate resonant circuits, push-pull circuits in FM range, especially for car radios

Optocoupler with Phototransistor Output

DESCRIPTION The K814P/K824P/K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared emitting diodes (reverse polarity) in 4-pin (single); 8 pin (dual) or 16-pin (quad) plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance b

Dual Channel Detector

Two seperate elements, size 1,5x1,5 Individual spectral window for each element Designed for Gas Analysis applications The LHi 814 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications. It includes two pyroelectric elements, each ha

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)