Silicon Variable Capacitance Diodes

Silicon Variable Capacitance Diodes • For FM radio tuners with extended frequency band • High tuning ratio at low supply voltage (car radio) • Monolithic chip (common cathode) for perfect dual diode tracking • Coded capacitance groups and group matching available • Pb-free (RoHS compliant) pa

Silicon Epitaxial Planar Dual Capacitance Diode

Features • Silicon Epitaxial Planar Diode • Common cathode • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications     Tuning of separate resonant circuits, push-pull circuits in FM range, especially for car radios

Silicon Variable Capacitance Diode (For FM radio tuners with extended frequency band High tuning ratio at low supply voltage (car radio)

Silicon Variable Capacitance Diodes • For FM radio tuners with extended frequency band • High tuning ratio at low supply voltage (car radio) • Monolithic chip (common cathode) for perfect dual diode tracking • Coded capacitance groups and group matching available

RF 调谐二极管

硅变容二极管 • 适用于扩展频带的 FM 收音机调谐器\n•  低电源电压下高调谐比（汽车收音机）\n•  单片芯片（共阴极），可实现完美的双二极管跟踪\n•  提供编码电容组和组匹配\n•  无铅（符合 RoHS 标准）封装;

Silicon Variable Capacitance Diodes

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Dual Varicap Diode

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Dual Varicap Diode

FEATURES • Silicon epitaxial planar diode • Common cathode • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Find out more about Vishay’s Automotive    Grade Product requirements at: www.vishay.com/applications    APPLICATI

Dual Varicap Diode

FEATURES • Silicon epitaxial planar diode • Common cathode • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Find out more about Vishay’s Automotive    Grade Product requirements at: www.vishay.com/applications    APPLICATI

Dual Varicap Diode

FEATURES • Silicon epitaxial planar diode • Common cathode • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Find out more about Vishay’s Automotive    Grade Product requirements at: www.vishay.com/applications    APPLICATI

Silicon Variable Capacitance Diodes

文件：61.56 Kbytes Page：5 Pages

Dual Varicap Diode

文件：171.04 Kbytes Page：4 Pages

Small signal capacitance diode for frequency tuning in FM radio tuners

Dual Varicap Diode

文件：171.04 Kbytes Page：4 Pages

Dual Varicap Diode

文件：171.04 Kbytes Page：4 Pages

Dual Varicap Diode

文件：171.04 Kbytes Page：4 Pages

Dual Varicap Diode

文件：171.04 Kbytes Page：4 Pages

Dual Varicap Diode

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：托盘 描述：DIODE VAR CAP 18V 50MA SOT-23 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：DIODE VAR CAP 18V 50MA SOT-23 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

Dual Varicap Diode

文件：171.04 Kbytes Page：4 Pages

Dual Varicap Diode

文件：171.04 Kbytes Page：4 Pages

Optocoupler with Phototransistor Output

DESCRIPTION The K814P/K824P/K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared emitting diodes (reverse polarity) in 4-pin (single); 8 pin (dual) or 16-pin (quad) plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance b

Dual Channel Detector

Two seperate elements, size 1,5x1,5 Individual spectral window for each element Designed for Gas Analysis applications The LHi 814 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications. It includes two pyroelectric elements, each ha

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)