丝印代码：T107B；TMP107 Digital Temperature Sensor With Bidirectional UART One-Wire Interface and EEPROM

1 Features 1• High Accuracy (Without Calibration): – ±0.4°C (max) from –20°C to +70°C – ±0.55°C (max) from –40°C to +100°C – ±0.7°C (max) from –55°C to +125°C • High Resolution: 14 Bits (0.015625°C) • UART-Compatible, SMAART Wire™ Interface: – Allows Up To 32 Daisy-Chained Devices • EEPROM

TMP107 Digital Temperature Sensor with Bidirectional UART One-Wire Interface and EEPROM

文件：971.89 Kbytes Page：40 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SENSOR DIGITAL -55C-125C 8SOIC 传感器，变送器 温度传感器 - 模拟和数字输出

丝印代码：T107B；TMP107 Digital Temperature Sensor With Bidirectional UART One-Wire Interface and EEPROM

1 Features 1• High Accuracy (Without Calibration): – ±0.4°C (max) from –20°C to +70°C – ±0.55°C (max) from –40°C to +100°C – ±0.7°C (max) from –55°C to +125°C • High Resolution: 14 Bits (0.015625°C) • UART-Compatible, SMAART Wire™ Interface: – Allows Up To 32 Daisy-Chained Devices • EEPROM

丝印代码：T107B；TMP107 Digital Temperature Sensor With Bidirectional UART One-Wire Interface and EEPROM

1 Features 1• High Accuracy (Without Calibration): – ±0.4°C (max) from –20°C to +70°C – ±0.55°C (max) from –40°C to +100°C – ±0.7°C (max) from –55°C to +125°C • High Resolution: 14 Bits (0.015625°C) • UART-Compatible, SMAART Wire™ Interface: – Allows Up To 32 Daisy-Chained Devices • EEPROM

TMP107 Digital Temperature Sensor with Bidirectional UART One-Wire Interface and EEPROM

文件：971.89 Kbytes Page：40 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SENSOR DIGITAL -55C-125C 8SOIC 传感器，变送器 温度传感器 - 模拟和数字输出

TMOS Switching(N-Channel-Enhancement)

TMOS Switching N–Channel — Enhancement

TMOS Switching(N-Channel-Enhancement)

TMOS Switching N–Channel — Enhancement

HIGH EFFICIENCY RECTIFIERS(1.0A,600-1000V)

Switchmode Power Rectifiers . . . Designed for use in switching power supplies. These state-of-the-art devices have the fllowing features: * High Surge Capacity * Low Power Loss, High efficiency. * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP