2.25Gbps HDMI 1.3a TMDS 转接驱动器

The TMDS141 HDMI hider is designed to accommodate a 1-m HDMI cable between a HDMI connector and a receiver. The internal cable causes signal distortion to high-speed TMDS signals, as well as increasing capacitance to the DDC channel. Each TMDS141 contains four TMDS repeaters to transmit digital cont • Supports 2.25 Gbps Signaling Rate for up to 1080p Resolutions Supporting 36-bits Per Pixel for Color Depth of 12-bits Per Color\n• Compatible with HDMI 1.3a\n• Integrated Receiver Termination\n• 8-dB Equalizer Compensates Losses from 5-m or Longer HDMI Cables\n• Selectable Output De-Emphasis Suppo;

HDMI HIDER

文件：722.08 Kbytes Page：28 Pages

HDMI HIDER

文件：502.11 Kbytes Page：25 Pages

HDMI HIDER

文件：502.11 Kbytes Page：25 Pages

封装/外壳：40-VFQFN 裸露焊盘 包装：托盘 描述：IC INTERFACE SPECIALIZED 40VQFN 集成电路（IC） 专用

HDMI HIDER

文件：502.11 Kbytes Page：25 Pages

HDMI HIDER

文件：722.08 Kbytes Page：28 Pages

HDMI HIDER

文件：502.11 Kbytes Page：25 Pages

HDMI HIDER

文件：722.08 Kbytes Page：28 Pages

封装/外壳：40-VFQFN 裸露焊盘 包装：管件 描述：IC INTERFACE SPECIALIZED 40VQFN 集成电路（IC） 专用

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

POWER TRANSISTORS(10A,60-100V,125W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP