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TMA256B

Triac (Bidirectional Triode Thyristor)

文件:285.16 Kbytes Page:12 Pages

SANKEN

三垦

三端双向可控硅

3 引脚双向可控硅(三端双向可控硅) ・导通电压低\n・用于感性负载(高dv/dt品)\n・也有 UL 规格认证品;

SANKEN

三垦

Triac (Bidirectional Triode Thyristor)

文件:285.16 Kbytes Page:12 Pages

SANKEN

三垦

isc Thyristors

文件:223.35 Kbytes Page:1 Pages

ISC

无锡固电

Triac (Bidirectional Triode Thyristor)

文件:285.16 Kbytes Page:12 Pages

SANKEN

三垦

封装/外壳:TO-3P-3 整包 包装:管件 描述:TRIAC 600V 25A 分立半导体产品 晶闸管 - TRIAC

SANKEN

三垦

PNP video transistors

DESCRIPTION PNP video transistor in a SOT223 plastic package. NPN complements: BFQ236 and BFQ236A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATION

PHILIPS

飞利浦

SMALL OUTLINE OPTOISOLATORS AC INPUT TRANSISTOR OUTPUT

The MOC256 is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti–parallel and coupled to a silicon NPN phototransistor detector. They are designed for applications requiring the detection or monitoring of AC signals. These devices are constructe

MOTOROLA

摩托罗拉

Silicon NPN Transistor Darlington w/Damper Diode

Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output stage in high power, fast switching applications.

NTE

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

POINN

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

POINN

TMA256B产品属性

  • 类型

    描述

  • IT(RMS):

    25A

  • IT(RMS)条件Tc:

    83℃

  • ITSM:

    250A

  • ITSM条件Tc:

    125℃

  • IGM:

    2A

  • VTM:

    1.3V

  • VTM条件ITM:

    20A

  • IGT Mode1(T2+、 G+):

    30mA

  • IGT Mode2(T2+、 G-):

    30mA

  • IGT Mode3(T2-、 G-):

    30mA

  • IGT条件VD:

    12V

  • IGT条件RL:

    20Ω

更新时间:2026-5-24 11:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
26+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
SANKEN
25+
TO-3P
1675
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