RF AMPLIFIER MODEL

文件：75.42 Kbytes Page：1 Pages

RF AMPLIFIER MODEL

文件：79.6 Kbytes Page：1 Pages

RF AMPLIFIER

文件：78.66 Kbytes Page：1 Pages

RF AMPLIFIER

文件：71.1 Kbytes Page：1 Pages

RF AMPLIFIER MODEL

文件：72.04 Kbytes Page：1 Pages

RF AMPLIFIER MODEL

文件：74.83 Kbytes Page：1 Pages

RF AMPLIFIER

文件：73.89 Kbytes Page：1 Pages

RF AMPLIFIER

文件：72.28 Kbytes Page：1 Pages

RF AMPLIFIER MODEL

文件：73.22 Kbytes Page：1 Pages

RF AMPLIFIER MODEL

文件：76.11 Kbytes Page：1 Pages

Low Phase Noise Amplifiers

UHF amplifier module

DESCRIPTION The BGY916 is a three-stage UHF amplifier module in a SOT365A package. It consists of one NPN silicon planar transistor die and two silicon MOS-FET dies mounted on a metallized ceramic AlN substrate, together with matching and bias circuitry. FEATURES • 26 V nominal supply voltage

Small Signal Diode

Small Signal Diode

Small Signal Diode

Small Signal Diode

16 WATT 925-960 MHz RF POWER AMPLIFIER

The RF Line UHF Silicon FET Power Amplifier Designed specifically for the European Digital Extended Group Special Mobile (GSM) Base Station applications in the 925–960 MHz frequency range. MHW916 operates from a 26 Volt supply and requires 15.5 dBm of RF input power. • Specified 26 Vo

Integrated Circuit High Current, NPN Transistor Array, Common Emitter

Description: The NTE916 is a high current transistor array in a 16–Lead DIP type package consisting of seven silicon NPN transistors on a common monolithic substrate connected in a common–emitter configuration designed for directly driving seven–segment displays and light–emitting diodes (LED)

General Purpose High Current NPN Transistor Arrays

General Purpose High Current NPN Transistor Arrays

SUBMINATURE/MULTI-FUNCTION/UNBRACKETED

3.2 x 5.0 x 1.3 mm HCMOS Compatible Surface Mount Oscillators

3.2 x 5.0 x 1.3 mm HCMOS Compatible Surface Mount Oscillators

3.2 x 5.0 x 1.3 mm HCMOS Compatible Surface Mount Oscillators

Integrated Circuit High Current, NPN Transistor Array, Common Emitter