全SiC功率模块

额定电压：1200V\n额定电流：720A\n芯片代次：G3 ●低开关损耗\n●转模封装\n●低感设计\n●Si3N4衬板;

RF AMPLIFIER MODEL

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RF AMPLIFIER

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RF AMPLIFIER

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RF AMPLIFIER MODEL

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RF AMPLIFIER MODEL

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RF AMPLIFIER

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RF AMPLIFIER MODEL

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RF AMPLIFIER

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RF AMPLIFIER

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RF AMPLIFIER MODEL

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RF AMPLIFIER MODEL

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Low Phase Noise Amplifiers

RF AMPLIFIER

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RF AMPLIFIER MODEL

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Schottky barrier diode

DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection in a small SOT23 plastic SMD package. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS • Ultra high-speed switching • V

NPN high-voltage transistors

DESCRIPTION NPN transistors in a SOT223 plastic package. PNP complement: BF723. FEATURES • Low feedback capacitance. APPLICATIONS • Class-B video output stages of colour television receivers • General purpose high voltage circuits.

NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies

Phase Control SCR (450-550 Amperes 2400 Volts)

Phase Control SCR 450-550 Amperes 2400 Volts Applications □ Power Supplies □ Battery Changers □ Motor Control □ VAR Generators

General Purpose Rectifier (600-1200 Amperes Average 4400 Volts)

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MC13-SERIES