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型号	功能描述	生产厂家&企业
TLV9061	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061	TLV906xS10MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 1Features •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Lowbroadbandnoise:10nV/√Hz •Lowinputbiascurrent:0.5pA •Lowquiescentcurrent:538μA •Unity-gainstable •InternalRFIandEMIfilter •Operationalatsupplyvoltagesas	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061	TLV906xS10MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 1Features •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Lowbroadbandnoise:10nV/√Hz •Lowinputbiascurrent:0.5pA •Lowquiescentcurrent:538μA •Unity-gainstable •InternalRFIandEMIfilter •Operationalatsupplyvoltagesas	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061	TLV906xS10-MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 文件：5.6964 Mbytes Page：79 Pages	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 文件：3.22792 Mbytes Page：44 Pages	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061	10-MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 文件：4.34088 Mbytes Page：62 Pages	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061	10-MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 文件：4.45729 Mbytes Page：65 Pages	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061	10-MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 文件：4.46245 Mbytes Page：63 Pages	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061	10-MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 文件：4.64649 Mbytes Page：66 Pages	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061	10-MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 文件：5.30865 Mbytes Page：75 Pages	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061	10-MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 文件：1.92683 Mbytes Page：30 Pages	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061	10-MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 文件：3.1617 Mbytes Page：41 Pages	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061	10-MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 文件：3.48871 Mbytes Page：43 Pages	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061	10-MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 文件：3.1689 Mbytes Page：45 Pages	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061	10-MHz,RRIO,CMOSOperationalAmplifierforCost-SensitiveSystems 文件：345.75 Kbytes Page：22 Pages	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061	10-MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 文件：4.87575 Mbytes Page：70 Pages	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061_V02	TLV906xS10MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 1Features •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Lowbroadbandnoise:10nV/√Hz •Lowinputbiascurrent:0.5pA •Lowquiescentcurrent:538μA •Unity-gainstable •InternalRFIandEMIfilter •Operationalatsupplyvoltagesas	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061_V03	TLV906xS10MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 1Features •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Lowbroadbandnoise:10nV/√Hz •Lowinputbiascurrent:0.5pA •Lowquiescentcurrent:538μA •Unity-gainstable •InternalRFIandEMIfilter •Operationalatsupplyvoltagesas	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061IDBVR	TLV906xS10MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 1Features •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Lowbroadbandnoise:10nV/√Hz •Lowinputbiascurrent:0.5pA •Lowquiescentcurrent:538μA •Unity-gainstable •InternalRFIandEMIfilter •Operationalatsupplyvoltagesas	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061IDBVR	TLV906xS10MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 1Features •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Lowbroadbandnoise:10nV/√Hz •Lowinputbiascurrent:0.5pA •Lowquiescentcurrent:538μA •Unity-gainstable •InternalRFIandEMIfilter •Operationalatsupplyvoltagesas	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061IDCKR	TLV906xS10MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 1Features •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Lowbroadbandnoise:10nV/√Hz •Lowinputbiascurrent:0.5pA •Lowquiescentcurrent:538μA •Unity-gainstable •InternalRFIandEMIfilter •Operationalatsupplyvoltagesas	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061IDCKR	TLV906xS10MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 1Features •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Lowbroadbandnoise:10nV/√Hz •Lowinputbiascurrent:0.5pA •Lowquiescentcurrent:538μA •Unity-gainstable •InternalRFIandEMIfilter •Operationalatsupplyvoltagesas	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061IDPWR	TLV906xS10MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 1Features •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Lowbroadbandnoise:10nV/√Hz •Lowinputbiascurrent:0.5pA •Lowquiescentcurrent:538μA •Unity-gainstable •InternalRFIandEMIfilter •Operationalatsupplyvoltagesas	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061IDPWR	TLV906xS10MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 1Features •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Lowbroadbandnoise:10nV/√Hz •Lowinputbiascurrent:0.5pA •Lowquiescentcurrent:538μA •Unity-gainstable •InternalRFIandEMIfilter •Operationalatsupplyvoltagesas	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061-Q1	TLV906xS10MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 1Features •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Lowbroadbandnoise:10nV/√Hz •Lowinputbiascurrent:0.5pA •Lowquiescentcurrent:538μA •Unity-gainstable •InternalRFIandEMIfilter •Operationalatsupplyvoltagesas	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061-Q1	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061-Q1	TLV906xS10MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 1Features •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Lowbroadbandnoise:10nV/√Hz •Lowinputbiascurrent:0.5pA •Lowquiescentcurrent:538μA •Unity-gainstable •InternalRFIandEMIfilter •Operationalatsupplyvoltagesas	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061-Q1	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061-Q1	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061-Q1	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061-Q1	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061-Q1_V01	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061-Q1_V02	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061-Q1_V03	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061-Q1_V04	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061-Q1_V05	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061QDBVRQ1	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061QDCKRQ1	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061QDCKRQ1	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061QDCKRQ1	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061S	TLV906xS10MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 1Features •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Lowbroadbandnoise:10nV/√Hz •Lowinputbiascurrent:0.5pA •Lowquiescentcurrent:538μA •Unity-gainstable •InternalRFIandEMIfilter •Operationalatsupplyvoltagesas	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061S	TLV906xS10MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 1Features •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Lowbroadbandnoise:10nV/√Hz •Lowinputbiascurrent:0.5pA •Lowquiescentcurrent:538μA •Unity-gainstable •InternalRFIandEMIfilter •Operationalatsupplyvoltagesas	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061SIDBVR	TLV906xS10MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 1Features •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Lowbroadbandnoise:10nV/√Hz •Lowinputbiascurrent:0.5pA •Lowquiescentcurrent:538μA •Unity-gainstable •InternalRFIandEMIfilter •Operationalatsupplyvoltagesas	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061SIDBVR	TLV906xS10MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 1Features •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Lowbroadbandnoise:10nV/√Hz •Lowinputbiascurrent:0.5pA •Lowquiescentcurrent:538μA •Unity-gainstable •InternalRFIandEMIfilter •Operationalatsupplyvoltagesas	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061S-Q1	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061S-Q1	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061S-Q1	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061S-Q1	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061S-Q1	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061SQDBVRQ1	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061SQDBVRQ1	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061SQDBVRQ1	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061SQDBVRQ1	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061SQDBVRQ1	TLV906xS-Q1Automotive10-MHz,RRIO,CMOSOperationalAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A –DeviceCDMESDclassificationlevelC6 •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.3mV •Unity-gainbandwidth:10MHz •Low	TITexas Instruments 德州仪器美国德州仪器公司
TLV9061_017	10-MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 文件：3.1617 Mbytes Page：41 Pages	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9061_018	10-MHz,RRIO,CMOSOperationalAmplifiersforCost-SensitiveSystems 文件：3.1689 Mbytes Page：45 Pages	TI1Texas Instruments 德州仪器美国德州仪器公司

TLV9061供应商更多...

更新时间：2025-7-19 12:20:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳兆威电子有限公司	TLV9061IDBVR	TI(德州仪器)	23+	SOT23-5	60000	只做原装！全系列供应可长期供货稳定价格优势！	询价
深圳市宏桥达半导体有限公司	TLV9061IDBVR	TI/德州仪器	22+	SOT23-5	500000	原厂渠道/找正品元器件就找宏桥达/实报实货/诚信第一/	询价
柒号芯城电子商务(深圳)有限公司	TLV9061SQDBVRQ1	TI	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市斌能达电子科技有限公司	TLV9061IDBVR	TI/德州仪器	24+	SOT-23-5	6000	全新原装深圳仓库现货有单必成	询价
深圳市得捷芯城科技有限公司	TLV9061SQDBVRQ1	TI(德州仪器)	24+	SOT-23-6	11048	原厂可订货,技术支持,直接渠道。可签保供合同	询价
深圳市高捷芯城科技有限公司	TLV9061IDCKR	TI(德州仪器)	24+	SC70-5	14548	原厂可订货,技术支持,直接渠道。可签保供合同	询价
深圳市恒达亿科技有限公司	TLV9061SQDBVRQ1	TI	25+	SOT23-6	6000	全新原装现货、诚信经营!	询价
深圳市坤融电子科技有限公司	TLV9061SQDBVRQ1	TI	24+	SOT23-6	9000	原厂授权代理价格绝对优势	询价
深圳市宇创芯科技有限公司	TLV9061IDBVR	TI/德州仪器	24+	SOT-23-5	9600	原装现货,优势供应,支持实单!	询价
贸泽芯城（深圳）电子科技有限公司	TLV9061SIDBVR	TI(德州仪器)	23+	N/A	12000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

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TLV9052IDDFR
TLV9052IDDFR
2023-6-28
TLV9061SQDBVRQ1
全新原装现货支持第三方机构验证
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TLV9062IDSGRTLV9062IDSGTTLV9062IDRTLV9062IDGKR
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TLV9061芯片相关品牌

TLV9061规格书下载地址

TLV9061参数引脚图相关

TLV9061数据表相关新闻

TLV9052IDDFR

TLV9061SQDBVRQ1

TLV9062IDSGR

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TLV9034 高精度双和四比较器

TLV9062IDGKR

DdatasheetPDF页码索引