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型号	功能描述	生产厂家企业	LOGO
TLV9004	TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004	TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004	TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004	TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004	TLV900x-Q1 Low-Power RRIO 1MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004	Quad, 5.5-V, 1-MHz, RRIO operational amplifier for cost-optimized applications	TI 德州仪器	TI
TLV9004	Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 文件：4.16163 Mbytes Page：70 Pages	TI 德州仪器	TI
TLV9004	Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 文件：4.12702 Mbytes Page：70 Pages	TI 德州仪器	TI
TLV9004	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 文件：5.32948 Mbytes Page：82 Pages	TI 德州仪器	TI
TLV9004	TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 文件：1.23746 Mbytes Page：32 Pages	TI 德州仪器	TI
TLV9004	TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 文件：1.89383 Mbytes Page：37 Pages	TI 德州仪器	TI
TLV9004	TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 文件：2.70269 Mbytes Page：44 Pages	TI 德州仪器	TI
TLV9004	Low-Power, Rail-to-Rail In and Out, 1-MHz Operational Amplifier 文件：3.12942 Mbytes Page：45 Pages	TI 德州仪器	TI
TLV9004	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 文件：6.33019 Mbytes Page：94 Pages	TI 德州仪器	TI
TLV9004	Low-Power, Rail-to-Rail In and Out, 1-MHz Operational Amplifier 文件：3.48892 Mbytes Page：57 Pages	TI 德州仪器	TI
TLV9004	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 文件：5.46205 Mbytes Page：86 Pages	TI 德州仪器	TI
TLV9004	Low-Power, Rail-to-Rail In and Out, 1-MHz Operational Amplifier 文件：1.81711 Mbytes Page：32 Pages	TI 德州仪器	TI
TLV9004	Low-Power, Rail-to-Rail In or Out, 1.2-MHz Operational Amplifier 文件：896.32 Kbytes Page：23 Pages	TI 德州仪器	TI
TLV9004	Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 文件：5.3778 Mbytes Page：76 Pages	TI 德州仪器	TI
TLV9004	Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 文件：5.0411 Mbytes Page：81 Pages	TI 德州仪器	TI
TLV9004IDR	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004IDR	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004IDR.A	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004IDRG4	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004IDRG4.A	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004IDYYR	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004IDYYR	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004IDYYR.A	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004IPWR	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004IPWR	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004IPWR.A	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004IPWR.B	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004IRTER	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004IRTER	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004IRTER.A	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004IRUCR	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004IRUCR	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004IRUCR.A	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004IRUCRG4	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004IRUCRG4.A	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004-Q1	TLV900x-Q1 Low-Power RRIO 1MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004-Q1	TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004-Q1	TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004-Q1	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004-Q1	TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems 1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal	TI 德州仪器	TI
TLV9004-Q1	TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004-Q1	TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004QDRQ1	TLV900x-Q1 Low-Power RRIO 1MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004QDRQ1	TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004QDRQ1	TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004QDRQ1	TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004QDRQ1	TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004QDYYRQ1	TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004QDYYRQ1	TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004QDYYRQ1	TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004QDYYRQ1	TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004QDYYRQ1	TLV900x-Q1 Low-Power RRIO 1MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004QPWRQ1	TLV900x-Q1 Low-Power RRIO 1MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI
TLV9004QPWRQ1	TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt	TI 德州仪器	TI

TLV9004供应商更多...

更新时间：2026-1-2 9:32:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳诚思涵科技有限公司	TLV9004QDRQ1	TI	24+	SOP14	6000	原装现货,有挂就有货	询价
深圳市得捷芯城科技有限公司	TLV9004IDR	TI(德州仪器)	24+	SOIC-14	7948	原厂可订货,技术支持,直接渠道。可签保供合同	询价
深圳市高捷芯城科技有限公司	TLV9004IRUCR	TI(德州仪器)	24+	X2-QFN-14(2X2)	9908	支持大陆交货,美金交易。原装现货库存。	询价
深圳市恒达亿科技有限公司	TLV9004IRTER	TI	25+	WQFN16	6000	全新原装现货、诚信经营!	询价
中天科工半导体（深圳）有限公司	TLV9004IDR	TI/德州仪器	25+	SOP14	20592	TI/德州仪器原装特价TLV9004IDR即刻询购立享优惠#长期有货	询价
柒号芯城电子商务(深圳)有限公司	TLV9004IRTER	TI	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市胜彬电子有限公司	TLV9004QDYYRQ1	TI/德州仪器	22+	SOT23-14	6000	原装正品现货假一罚十	询价
深圳市华康联电子科技有限公司	TLV9004SIRTER	TI	24+	N/A	10000	只做原装,实单最低价支持	询价
深圳良洲科技有限公司	TLV9004IPWR	TI	23+	NA	12000	原装现货,实单价格可谈	询价
深圳市毅创辉电子科技有限公司	TLV9004IRTER	TI	23+	WQFN-16	30000	全新原装正品	询价

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