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型号	功能描述	生产厂家&企业
TLV9001	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001	TLV900x-Q1Low-PowerRRIO1MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9001_V04	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001IDBVR	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001IDCKR	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001IDPWR	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001-Q1	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001-Q1	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001-Q1	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001-Q1	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001-Q1	TLV900x-Q1Low-PowerRRIO1MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9001-Q1	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001-Q1_V02	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001-Q1_V03	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001-Q1_V04	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001-Q1_V05	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001-Q1_V06	TLV900x-Q1Low-PowerRRIO1MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9001QDBVRQ1	TLV900x-Q1Low-PowerRRIO1MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9001QDBVRQ1	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001QDCKRQ1	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001QDCKRQ1	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001QDCKRQ1	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001QDCKRQ1	TLV900x-Q1Low-PowerRRIO1MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9001S	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001SIDBVR	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001SIDCKR	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001TIDCKR	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001UIDBVR	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9001ZIDPWR	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002	TLV900x-Q1Low-PowerRRIO1MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9002	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002IDDFR	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002IDGKR	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002IDGKT	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002IDR	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002IDR-TP	1MHz,LowPower,CMOS,RailtoRailOperationalAmplifier Features «GeneralPurpose,LowCost 'GainBandwidthProduct:1MHz «LowInputBiasCurrent:10pA(Typ.) oLowOffsetVoltage:5mV(Max.) oQuiescentCurrent:504AperAmplifier(Ty; «UnityGainStable oRail-to-RailInputandOutput «SingleorDualSupplyOperation «S	TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司
TLV9002IDSGR	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002IDSGT	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002IPWR	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002-Q1	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002-Q1	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002-Q1	TLV900xLow-Power,RRIO,1-MHzOperationalAmplifierforCost-SensitiveSystems 1Features •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvoltage:±0.4mV •Unity-gainbandwidth:1MHz •Lowbroadbandnoise:27nV/√Hz •Lowinputbiascurrent:5pA •Lowquiescentcurrent:60μA/Ch •Unity-gainstable •Internal	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002-Q1	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002-Q1	TLV900x-Q1Low-PowerRRIO1MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9002-Q1	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002QDGKRQ1	TLV900x-Q1Low-PowerRRIO1MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TI1Texas Instruments 德州仪器美国德州仪器公司
TLV9002QDGKRQ1	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002QDGKRQ1	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002QDGKRQ1	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002QDGKRQ1	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002QDRQ1	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司
TLV9002QDRQ1	TLV900x-Q1Low-PowerRRIO1-MHzAutomotiveOperationalAmplifier 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC6 •ScalableCMOSamplifierforlow-costapplications •Rail-to-railinputandoutput •Lowinputoffsetvolt	TITexas Instruments 德州仪器美国德州仪器公司

TLV900供应商更多...

更新时间：2025-7-19 18:19:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市威雅利发展有限公司	TLV9004IDR	TI	19+	SOP14	1538	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市冠亿通科技有限公司	TLV9004IDR	TI/德州仪器	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市讯顺达科技有限公司	TLV9004IPWR	TI	2105+	TSSOP-14	2000	全新原装公司现货	询价
深圳市汇莱威科技有限公司	TLV9004	TI	24+	SOIC\|14	70230	免费送样原盒原包现货一手渠道联系	询价
深圳市得捷芯城科技有限公司	TLV9004IDR	TI(德州仪器)	24+	SOIC-14	7948	原厂可订货,技术支持,直接渠道。可签保供合同	询价
深圳市胜彬电子有限公司	TLV9004QDYYRQ1	TI/德州仪器	22+	SOT23-14	6000	原装正品现货假一罚十	询价
深圳市恒达亿科技有限公司	TLV9004IRTER	TI	25+	WQFN16	6000	全新原装现货、诚信经营!	询价
深圳市赛特兴科技有限公司	TLV9004IPWR	TI	23+	TSSOP-14	50	正规渠道,只有原装!	询价
深圳市高捷芯城科技有限公司	TLV9004IRUCR	TI(德州仪器)	24+	X2-QFN-14(2X2)	9908	支持大陆交货,美金交易。原装现货库存。	询价
深圳市百诺芯科技有限公司	TLV9004IDR	TI/德州仪器	23+	SOP14	32732	原装正品代理渠道价格优势	询价

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TLV900规格书下载地址

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TLV9002IDGKR
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TLV8811 单通道 425nA 毫微功耗放大器
TLV8811（单通道）和TLV8812（双通道）系列精密超低功耗运算放大器是面向电池供电无线设备和低功耗有线设备中的成本优化型、“始终开启”感测应用的理想选择。凭借6kHz带宽、425nA静态电流以及削减至500μV以下的偏移电压，
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TLV900供应商更多...

TLV900芯片相关品牌

TLV900规格书下载地址

TLV900参数引脚图相关

TLV900数据表相关新闻

TLV9002IDGKR

TLV9022QDRQ1

TLV9004QDYYRQ1

TLV8544PWR

TLV8544PWR TSSOP14 TI/德州仪器 运放IC全新现货 进口原装

TLV8811 单通道 425nA 毫微功耗放大器

DdatasheetPDF页码索引

TLV8544PWR TSSOP14 TI/德州仪器运放IC全新现货进口原装