gaas ired & photo-thyristor

GaAs IRED & PHOTO-THYRISTOR The TOSHIBA TLP543J consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in s sven lead plastic DIP package. The TOSHIBA TLP545J consists of a photo-thyristor optically coupled to a gallium arsenide infrared in a six lead p

gaas ired & photo-thyristor

gaas ired & photo-thyristor

GaAs IRED & PHOTO-THYRISTOR The TOSHIBA TLP543J consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in s sven lead plastic DIP package. The TOSHIBA TLP545J consists of a photo-thyristor optically coupled to a gallium arsenide infrared in a six lead p

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

UHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. The devices a