MEASUREMENT INSTRUMENTS LOGIC IC TESTERS/MEMORY TESTERS BOARD TESTERS/SCANNERS

MEASUREMENT INSTRUMENTS LOGIC IC TESTERS / MEMORY TESTERS BOARD TESTERS / SCANNERS The TOSHIBA TLP3115 Mini-flat photorelay is a small-outline photorelay, suitable for surface-mount assembly. The TLP3115 consists of an infraredemitting diode optically coupled to a photo-MOS FET and housed in a

Photorelay (MOSFET output, 1-form-a)

封装/外壳：4-SMD，鸥翼 包装：卷带（TR） 描述：SSR RELAY SPST-NO 300MA 0-40V 继电器 固态继电器

封装/外壳：4-SMD，鸥翼 包装：卷带（TR） 描述：SSR RELAY SPST-NO 300MA 0-40V 继电器 固态继电器

MEASUREMENT INSTRUMENTS LOGIC IC TESTERS / MEMORY TESTERS BOARD TESTERS / SCANNERS

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NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=10KΩ)

Triple Video D/A Converters 3 x 10 bit, 150 Ms/s

Description FMS3110/3115 products are low-cost triple D/A converters. Features • 10-bit resolution • 150 megapixels per second • ± 0.1 linearity error • Sync and blank controls • 1.0V p-p video into 37.5Ω or 75Ω load • Internal bandgap voltage reference • Double-buffered data for low dist

Hybrid integrated circuits for inductive proximity detectors

DESCRIPTION The OM3105P is a hybrid integrated circuit intended for inductive proximity detectors in a tubular construction, especially the M5 hollow stud. The circuit performs a make function (version 1): when actuated, the current flows through the load, which can be for example a LED or an o

Hybrid integrated circuits for inductive proximity detectors

DESCRIPTION The OM3105P is a hybrid integrated circuit intended for inductive proximity detectors in a tubular construction, especially the M5 hollow stud. The circuit performs a make function (version 1): when actuated, the current flows through the load, which can be for example a LED or an o

FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components. FEATURES • Provides bias for GaAs and HEMT FETs • Drives up to three FET