Photorelay (MOSFET output, 1-form-a)

Application Scope：Measurement instrumentation / Security equipments\nNumber of Circuits：1\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本\nSafety Standard：Approved　:　UL 1577 / cUL (CSA Component Acceptance Service No. 5A) / EN 60747-5-5*Download Online Certification of Safety Standard(U ON-state current ION 0.4 A \nOFF-state output terminal voltage VOFF 60 V \nOperating Temperature (Max) Topr 85 ℃ \nOperating Temperature (Min) Topr -40 ℃ \nIsolation voltage BVs@1minute (Min) BVS 1500 Vrms ;

TOSHIBA PHOTOCOUPLER GAAS IRED & PHOTO MOSFET

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Photocouplers Photorelay

Applications • Security Systems • Factory Automation (FA) • Measuring Instruments • Battery Management System (BMS) (Non-Automotive) • Programmable Logic Controllers (PLCs) • Mechanical relay replacements General The Toshiba TLP176AM consists of an infrared LED coupled to a photo-MOSFET

Photorelay (MOSFET output, 1-form-a)

Application Scope：Programmable Logic Controllers (PLCs) / Measurement instrumentation / Security equipments\nNumber of Circuits：1\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 ON-state current ION 0.7 A \nOFF-state output terminal voltage VOFF 60 V \nOperating Temperature (Max) Topr 110 ℃ \nOperating Temperature (Min) Topr -40 ℃ \nIsolation voltage BVs@1minute (Min) BVS 3750 Vrms ;

封装/外壳：4-SMD，鸥翼 包装：卷带（TR） 描述：SSR RELAY SPST-NO 400MA 0-60V 继电器 固态继电器

封装/外壳：6-SOP（0.179"，4.55mm），4 引线 包装：散装 描述：SSR RELAY SPST-NO 700MA 0-60V 继电器 固态继电器

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.