Digital Isolation for A/D,D/A Conversion. High Speed Line Receiver. Microprocessor System Interfaces. Plasma Display Panel.

PDP(Plasma Display Panel) High Speed Interface FA(Factory Automation) The Toshiba TLP116 consists of an infrared emitting diode and an integrated high-gain, high-speed photodetector. ● Inverter logic (totem pole output) ● Package type : MFSOP6 ● Guaranteed performance over temperature : -40

Photocoupler (photo-IC output)

Feature：5V supply voltage\nApplication Scope：Communication interface / PLC / Measurement instrumentation\nFunction：High-speed\nNumber of Circuits：1\nOutput Interface：totem-pole(INV)\nRoHS Compatible Product(s) (#)：Available\nSafety Standard：Approved　:　UL 1577 / cUL (CSA Component Acceptance Service

PHOTO-IC PDP(Plasma Display Panel)

文件：279.19 Kbytes Page：8 Pages

PHOTOCOUPLER GaA?밃s LED & PHOTO-IC

Plasma Display Panels (PDPs) High-Speed Interface Factory Automation (FA) The Toshiba TLP116A mini-flat coupler is a small-outline coupler suitable for surface-mount assembly. The TLP116A consists of a GaAℓAs light-emitting diode and an integrated high-gain, high-speed photodetector. This uni

Photocoupler (photo-IC output)

Feature：5V supply voltage\nApplication Scope：Communication interface / PLC / Measurement instrumentation\nFunction：High-speed\nNumber of Circuits：1\nOutput Interface：totem-pole(INV)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国\nSafety Standard：Approved　:　UL 1577 / cUL (CSA Compo Supply Voltage VCC 6 V \nOperating Temperature Topr -40 to 100 ℃ ;

PHOTO-IC PDP(Plasma Display Panel)

文件：279.19 Kbytes Page：8 Pages

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting p

General Purpose Silicon Rectifier

Description: The NTE116 is a general purpose silicon rectifier in a DO–41 case designed for low power and switching applications.

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

POWER TRANSISTORS(2.0A,60-100V,50W)

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS