High Precision Hall-Effect Switch

Functional Description The TLE4906H and the TLE4906L are integrated circuit Hall-effect sensors designed specifically for highly accurate applications. Precise magnetic switching points and high temperature stability are achieved by active compensation circuits and chopper techniques on chip. F

封装/外壳：TO-236-3，SC-59，SOT-23-3 功能：单极开关 包装：散装 描述：MAGNETIC SWITCH UNIPOLAR SC59 传感器，变送器 磁性传感器 - 开关（固态）

High Precision Hall-Effect Switch

High Precision Hall-Effect Switch

文件：874.99 Kbytes Page：20 Pages

High Precision Hall-Effect Switch

文件：874.99 Kbytes Page：20 Pages

Dual N-Channel MOSFET

■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4906 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.09623 Mbytes Page：9 Pages

Adjustable RF Inductors

文件：29.55 Kbytes Page：1 Pages

Adjustable RF Inductors

文件：29.55 Kbytes Page：1 Pages