| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VeryHigh-DefinitionColorDisplayHorizontalDeflectionOutputApplications???? Ultrahigh-DefinitionColorDisplayHorizontalDeflectionOutputApplications Features •Highspeed(tf=100nstyp). •Highbreakdownvoltage(VCBO=1500V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess. •On-chipdamperdiode. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 |  |   | |
9.1VOLTNOMINALZENERVOLTAGE5 •TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •9.1VOLTNOMINALZENERVOLTAGE±5 •LOWCURRENTOPERATINGRANGE:0.5and1.0mA •METALLURGICALLYBONDED •DOUBLEPLUGCONSTRUCTION | CDI-DIODE Compensated Deuices Incorporated |  | | |
TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •9.1VOLTNOMINALZENERVOLTAGE±5 •LOWCURRENTOPERATINGRANGE:0.5and1.0mA •METALLURGICALLYBONDED •DOUBLEPLUGCONSTRUCTION | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | | |
9.1VOLTNOMINALZENERVOLTAGE5 •TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •9.1VOLTNOMINALZENERVOLTAGE±5 •LOWCURRENTOPERATINGRANGE:0.5and1.0mA •METALLURGICALLYBONDED •DOUBLEPLUGCONSTRUCTION | CDI-DIODE Compensated Deuices Incorporated | | | |
TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •TEMPERATURECOMPENSATEDZENERREFERENCEDIODES •LEADLESSPACKAGEFORSURFACEMOUNT •9.1VOLTNOMINALZENERVOLTAGE±5 •LOWCURRENTOPERATINGRANGE:0.5and1.0mA •METALLURGICALLYBONDED •DOUBLEPLUGCONSTRUCTION | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CDI-DIODE |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
MICROCHIP(美国微芯) |
24+ |
DO213AA |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
MICROSEMI |
1809+ |
SMD |
26 |
就找我吧!--邀您体验愉快问购元件! |
TLE4769E芯片相关品牌
TLE4769E规格书下载地址
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2020-9-9
DdatasheetPDF页码索引
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